Hooksett, New Hampshire
United States
10
2010-10-21
The entities that hold a legal rights for patent applications filed by inventor Braithwaite Glyn:
Glyn Braithwaite from Hooksett, US has applied for patents for these inventions. The list has both pending applications and granted patents:
RF circuits including transistors having strained material layers
#2 | 2006-09-07Methods for forming structures including strained-semiconductor-on-insulator devices
#3 | 2006-09-07Methods for forming double gate strained-semiconductor-on-insulator device structures
#4 | 2006-09-07Double gate strained-semiconductor-on-insulator device structures
#5 | 2006-09-07Methods for forming strained-semiconductor-on-insulator bipolar device structures
#6 | 2006-08-24Strained-semiconductor-on-insulator bipolar device structures
#7 | 2006-07-11Methods of forming strained-semiconductor-on-insulator finFET device structures
#8 | 2005-12-22Strained-semiconductor-on-insulator finFET device structures
#9 | 2005-08-23RF circuits including transistors having strained material layers
#10 | 2005-06-02RF circuits including transistors having strained material layers
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