Inventor profile of:

Siddha Pimputkar

City:

Goleta, California

Country:

United States

Published Applications:

11

Last publication date:

2013-01-17

Top Assignees for applications by Siddha Pimputkar

The entities that hold a legal rights for patent applications filed by inventor Pimputkar Siddha:

Recent patent applications by Pimputkar Siddha

Siddha Pimputkar from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-01-17
US20130015560A1
Chemistry; metallurgy

GROWTH OF BULK GROUP-III NITRIDE CRYSTALS AFTER COATING THEM WITH A GROUP-III METAL AND AN ALKALI METAL

#2 | 2012-06-28
US20120164386A1
Chemistry; metallurgy

Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other

#3 | 2012-05-03
US20120103419A1
Electricity

GROUP-III NITRIDE SOLAR CELLS GROWN ON HIGH QUALITY GROUP-III NITRIDE CRYSTALS MOUNTED ON FOREIGN MATERIAL

#4 | 2012-03-15
US20120063987A1
Chemistry; metallurgy

GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY OFF-ORIENTED NON-POLAR OR SEMI-POLAR GROWTH SURFACE OF A GROUP-III NITRIDE SEED CRYSTAL

#5 | 2011-12-08
US20110300051A1
Electricity

GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME

#6 | 2011-09-15
US20110223092A1
Chemistry; metallurgy

Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals

#7 | 2011-09-15
US20110220013A1
Chemistry; metallurgy

Reactor designs for use in ammonothermal growth of group-III nitride crystals

#8 | 2011-09-01
US20110212013A1
Chemistry; metallurgy

ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

#9 | 2011-09-01
US20110209659A1
Electricity

CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL

#10 | 2011-08-25
US20110203514A1
Chemistry; metallurgy

NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

#11 | 2010-05-06
US20100111808A1
Chemistry; metallurgy

GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME

InventorID:

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