James S. Speck

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

High power blue-violet III-nitride semipolar laser diodes

ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS

Method of controlling stress in group-III nitride films deposited on substrates

High light extraction efficiency nitride based light emitting diode by surface roughening

METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

Planar nonpolar group-III nitride films grown on miscut substrates

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE

PEC ETCHING OF (20-2-1) SEMIPOLAR GALLIUM NITRIDE FOR EXTERNAL EFFICIENCY ENHANCEMENT IN LIGHT EMITTING DIODE APPLICATIONS

Planar nonpolar group-III nitride films grown on miscut substrates

White light source employing a III-nitride based laser diode pumping a phosphor

REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

LIGHT-EMITTING DIODES WITH LOW TEMPERATURE DEPENDENCE

HIGH OUTPUT POWER, HIGH EFFICIENCY BLUE LIGHT-EMITTING DIODES

Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

CRYSTAL GROWTH USING NON-THERMAL ATMOSPHERIC PRESSURE PLASMAS

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES

USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL GROWN USING THE AMMONOTHERMAL METHOD

LIGHT EMITTING DIODE WITH CONFORMAL SURFACE ELECTRICAL CONTACTS WITH GLASS ENCAPSULATION

GROWTH OF BULK GROUP-III NITRIDE CRYSTALS AFTER COATING THEM WITH A GROUP-III METAL AND AN ALKALI METAL

Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N

HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes

Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices

III-NITRIDE FLIP-CHIP SOLAR CELLS

Planar nonpolar group-III nitride films grown on miscut substrates

Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other

METHOD FOR FABRICATION OF (AL,IN,GA) NITRIDE BASED VERTICAL LIGHT EMITTING DIODES WITH ENHANCED CURRENT SPREADING OF N-TYPE ELECTRODE

METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al,In,Ga)N/Al(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES

Technique for the growth of planar semi-polar gallium nitride

MAGNESIUM DOPING IN BARRIERS IN MULTIPLE QUANTUM WELL STRUCTURES OF III-NITRIDE-BASED LIGHT EMITTING DEVICES

High light extraction efficiency nitride based light emitting diode by surface roughening

TEXTURED III-V SEMICONDUCTOR

STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING

VICINAL SEMIPOLAR III-NITRIDE SUBSTRATES TO COMPENSATE TILT OF RELAXED HETERO-EPITAXIAL LAYERS

DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO)

Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Method for increasing the area of non-polar and semi-polar nitride substrates

Miscut semipolar optoelectronic device

LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS

Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES

Method of controlling stress in group-III nitride films deposited on substrates

DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS

GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY OFF-ORIENTED NON-POLAR OR SEMI-POLAR GROWTH SURFACE OF A GROUP-III NITRIDE SEED CRYSTAL

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION

Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

OPTOELECTRONIC DEVICES WITH EMBEDDED VOID STRUCTURES

LIGHT EMITTING DEVICES WITH EMBEDDED VOID-GAP STRUCTURES THROUGH BONDING OF STRUCTURED MATERIALS ON ACTIVE DEVICES

Large Area Nitride Crystal and Method for Making It

GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME

GROWTH OF REDUCED DISLOCATION DENSITY NON-POLAR GALLIUM NITRIDE

Ammonothermal method for growth of bulk gallium nitride

Method for synthesis of high quality large area bulk gallium based crystals

Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals

Reactor designs for use in ammonothermal growth of group-III nitride crystals

ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS

Field-effect transistor with compositionally graded nitride layer on a silicaon substrate

SUPERLUMINESCENT DIODES BY CRYSTALLOGRAPHIC ETCHING

Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES

Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices

Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers

Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES

ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS

Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE

N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor

Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Miscut semipolar optoelectronic device

Technique for the growth of planar semi-polar gallium nitride

GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME

Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys

Photoelectrochemical etching for chip shaping of light emitting diodes

Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture

HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE

GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY

Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut