Beacon, New York
United States
18
2019-07-04
The entities that hold a legal rights for patent applications filed by inventor JAIN SAMEER H:
SAMEER H JAIN from Beacon, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Third type of metal gate stack for CMOS devices
#2 | 2017-08-10Third type of metal gate stack for CMOS devices
#3 | 2016-11-10Unidirectional spacer in trench silicide
#4 | 2016-09-29Fin end spacer for preventing merger of raised active regions
#5 | 2016-02-04Fin end spacer for preventing merger of raised active regions
#6 | 2016-02-04Fin end spacer for preventing merger of raised active regions
#7 | 2016-02-04Fin end spacer for preventing merger of raised active regions
#8 | 2015-09-24Selective dielectric spacer deposition for exposing sidewalls of a finFET
#9 | 2015-09-03Third type of metal gate stack for CMOS devices
#10 | 2015-08-18Selective dielectric spacer deposition for exposing sidewalls of a finFET
#11 | 2015-07-16Fin end spacer for preventing merger of raised active regions
#12 | 2015-02-10Formation of functional gate structures with different critical dimensions using a replacement gate process
#13 | 2013-01-17Replacement metal gate structure and methods of manufacture
#14 | 2011-12-08Replacement gate MOSFET with self-aligned diffusion contact
#15 | 2009-07-02METHOD OF FABRICATING GATE ELECTRODE FOR GATE OF MOSFET AND STRUCTURE THEREOF
#16 | 2009-06-11PROCESS AND METHOD TO LOWER CONTACT RESISTANCE
#17 | 2008-06-26Scalable strained FET device and method of fabricating the same
#18 | 2007-09-13LASER SURFACE ANNEALING OF ANTIMONY DOPED AMORPHIZED SEMICONDUCTOR REGION
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