Nagoya
Japan
11
2011-03-17
The entities that hold a legal rights for patent applications filed by inventor Tanaka Mitsuhiro:
Mitsuhiro Tanaka from Nagoya, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure
#2 | 2011-03-03Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
#3 | 2011-03-03Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
#4 | 2011-02-03Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
#5 | 2011-02-03Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device
#6 | 2010-11-18Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
#7 | 2010-04-01Light-receiving device and manufacturing method for a light-receiving device
#8 | 2009-03-05Magnetic sensor, hall element, hall IC, magnetoresistive effect element, method of fabricating hall element, and method of fabricating magnetoresistive effect element
#9 | 2009-02-26MIS gate structure type HEMT device and method of fabricating MIS gate structure type HEMT device
#10 | 2006-07-13Apparatus for fabricating a III-V nitride film and a method for fabricating the same
#11 | 2006-04-25Apparatus for fabricating a III-V nitride film and a method for fabricating the same
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