Umesh K. Mishra

High mobility group-III nitride transistors with strained channels

METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION OF PSEUDO-SUBSTRATES AND FORMATION OF COMPOSITES ALLOWING THE ADDITION OF PREVIOUSLY UN-ACCESSIBLE FUNCTIONALITY OF GROUP lll-NITRIDES

Method to control the relaxation of thick films on lattice-mismatched substrates

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES

NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS

III-N based material structures, methods, devices and circuit modules based on strain management

III-N transistor structures with stepped cap layers

Structure for increasing mobility in a high electron mobility transistor

Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-POLAR III-NITRIDE SEMICONDUCTORS WITH HIGH INTERFACE QUALITY AND TUNABLE FIXED INTERFACE CHARGE

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Interdigitated multiple pixel arrays of light-emitting devices

Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge

Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer

Interdigitated multiple pixel arrays of light-emitting devices

Method of controlling stress in group-III nitride films deposited on substrates

Interdigitated multiple pixel arrays of light-emitting devices

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors

Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

Interdigitated multiple pixel arrays of light-emitting devices

Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer

NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES

Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition

III-NITRIDE FLIP-CHIP SOLAR CELLS

TEXTURED III-V SEMICONDUCTOR

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Method of controlling stress in group-III nitride films deposited on substrates

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials

Interdigitated multiple pixel arrays of light-emitting devices

Field-effect transistor with compositionally graded nitride layer on a silicaon substrate

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING

STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES

Fabrication of single or multiple gate field plates

High efficiency LEDs with tunnel junctions

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

METHOD OF FABRICATING SEMI-INSULATING GALLIUM NITRIDE USING AN ALUMINUM GALLIUM NITRIDE BLOCKING LAYER

Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition

Interdigitated multiple pixel arrays of light-emitting devices

Polarization-induced barriers for N-face nitride-based electronics

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL

HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE

P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor

METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALS

DUAL SURFACE-ROUGHENED N-FACE HIGH-BRIGHTNESS LED

METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLANTATION WITH REDUCED DOPANT ACTIVATION AND DAMAGE RECOVERY TEMPERATURE

N-face high electron mobility transistors with low buffer leakage and low parasitic resistance

Gated electrodes for electrolysis and electrosynthesis

LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS

POLARIZATION-INDUCED TUNNEL JUNCTION

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices

High efficiency LED with tunnel junction layer

Low resistance tunnel junctions in wide band gap materials and method of making same

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same

Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking