Inventor profile of:

Jeffrey S. Brown

City:

Middlesex, Vermont

Country:

United States

Published Applications:

23

Last publication date:

2010-04-22

Top Assignees for applications by Jeffrey S. Brown

The entities that hold a legal rights for patent applications filed by inventor Brown Jeffrey S.:

Recent patent applications by Brown Jeffrey S.

Jeffrey S. Brown from Middlesex, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2010-04-22
US20100096536A1
Electricity

On demand circuit function execution employing optical sensing

#2 | 2009-06-04
US20090144689A1
Physics

Structure for a voltage detection circuit in an integrated circuit and method of generating a trigger flag signal

#3 | 2009-05-28
US20090134463A1
Electricity

Semiconductor structure and system for fabricating an integrated circuit chip

#4 | 2009-01-22
US20090021289A1
Electricity

Voltage detection circuit in an integrated circuit and method of generating a trigger flag signal

#5 | 2008-07-17
US20080169844A1
Electricity

Voltage detection circuit and circuit for generating a trigger flag signal

#6 | 2007-12-20
US20070292996A1
Performing operations; transporting

Method and structure to process thick and thin fins and variable fin to fin spacing

#7 | 2007-12-13
US20070284669A1
Performing operations; transporting

METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING

#8 | 2007-12-13
US20070284659A1
Electricity

METHOD OF FORMING HIGH VOLTAGE N-LDMOS TRANSISTORS HAVING SHALLOW TRENCH ISOLATION REGION WITH DRAIN EXTENSIONS

#9 | 2007-07-26
US20070170521A1
Electricity

Method and structure to process thick and thin fins and variable fin to fin spacing

#10 | 2007-06-07
US20070127172A1
Electricity

On demand circuit function execution employing optical sensing

#11 | 2007-01-16
US10227995
-

Concurrent Fin-FET and thick-body device fabrication

#12 | 2006-11-09
US20060249799A1
Electricity

Concurrent fin-fet and thick body device fabrication

#13 | 2006-11-07
US10731511
-

Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure

#14 | 2006-10-05
US20060220174A1
Electricity

E-Fuse and anti-E-Fuse device structures and methods

#15 | 2006-06-15
US20060128071A1
Electricity

Integrated antifuse structure for FINFET and CMOS devices

#16 | 2006-02-28
US10845835
-

Zero threshold voltage pFET and method of making same

#17 | 2005-08-25
US20050186744A1
Electricity

MOSFET with decoupled halo before extension

#18 | 2005-07-07
US20050148140A1
Electricity

Method for scalable, low-cost polysilicon capacitor in a planar DRAM

#19 | 2005-05-03
US10064869
-

DRAM cell with enhanced SER immunity

#20 | 2005-04-28
US20050090049A1
Electricity

Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions

#21 | 2005-04-19
US10723700
-

Selective silicide blocking

#22 | 2005-04-05
US10249766
-

High voltage N-LDMOS transistors having shallow trench isolation region

#23 | 2005-03-08
US10733671
-

DRAM cell with enhanced SER immunity

InventorID:

3780336 ⎘