Middlesex, Vermont
United States
23
2010-04-22
The entities that hold a legal rights for patent applications filed by inventor Brown Jeffrey S.:
Jeffrey S. Brown from Middlesex, US has applied for patents for these inventions. The list has both pending applications and granted patents:
On demand circuit function execution employing optical sensing
#2 | 2009-06-04Structure for a voltage detection circuit in an integrated circuit and method of generating a trigger flag signal
#3 | 2009-05-28Semiconductor structure and system for fabricating an integrated circuit chip
#4 | 2009-01-22Voltage detection circuit in an integrated circuit and method of generating a trigger flag signal
#5 | 2008-07-17Voltage detection circuit and circuit for generating a trigger flag signal
#6 | 2007-12-20Method and structure to process thick and thin fins and variable fin to fin spacing
#7 | 2007-12-13METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING
#8 | 2007-12-13METHOD OF FORMING HIGH VOLTAGE N-LDMOS TRANSISTORS HAVING SHALLOW TRENCH ISOLATION REGION WITH DRAIN EXTENSIONS
#9 | 2007-07-26Method and structure to process thick and thin fins and variable fin to fin spacing
#10 | 2007-06-07On demand circuit function execution employing optical sensing
#11 | 2007-01-16Concurrent Fin-FET and thick-body device fabrication
#12 | 2006-11-09Concurrent fin-fet and thick body device fabrication
#13 | 2006-11-07Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
#14 | 2006-10-05E-Fuse and anti-E-Fuse device structures and methods
#15 | 2006-06-15Integrated antifuse structure for FINFET and CMOS devices
#16 | 2006-02-28Zero threshold voltage pFET and method of making same
#17 | 2005-08-25MOSFET with decoupled halo before extension
#18 | 2005-07-07Method for scalable, low-cost polysilicon capacitor in a planar DRAM
#19 | 2005-05-03DRAM cell with enhanced SER immunity
#20 | 2005-04-28Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions
#21 | 2005-04-19Selective silicide blocking
#22 | 2005-04-05High voltage N-LDMOS transistors having shallow trench isolation region
#23 | 2005-03-08DRAM cell with enhanced SER immunity
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