Peter Javorka

EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR (EDMOS) FIELD EFFECT TRANSISTOR (FET) WITH DUAL THICKNESS SEMICONDUCTOR MATERIAL

Structures for a field-effect transistor that include a spacer structure

Transistor with phase transition material region between channel region and each source/drain region

Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions

Semiconductor device comprising isolation trenches inducing different types of strain

TRANSISTOR HAVING REDUCED GATE RESISTANCE AND ENHANCED STRESS TRANSFER EFFICIENCY AND METHOD OF FORMING THE SAME

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions

Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions

Technique for forming a strained transistor by a late amorphization and disposable spacers

TECHNIQUE FOR REDUCING CRYSTAL DEFECTS IN STRAINED TRANSISTORS BY TILTED PREAMORPHIZATION

Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors