Inventor profile of:

Eun-Ji Jung

City:

Gyeonggi-do

Country:

South Korea

Published Applications:

21

Last publication date:

2022-01-06

Top Assignees for applications by Eun-Ji Jung

The entities that hold a legal rights for patent applications filed by inventor Jung Eun-Ji:

Recent patent applications by Jung Eun-Ji

Eun-Ji Jung from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-01-06
US20220000728A1
Human necessities

Cosmetic Composition For Sustaining Luster

#2 | 2009-12-31
US20090325371A1
Electricity

Methods of forming integrated circuit devices having stacked gate electrodes

#3 | 2009-11-12
US20090280605A1
Electricity

Method of forming semiconductor device having stacked transistors

#4 | 2009-07-30
US20090191699A1
Electricity

Methods for forming silicide conductors using substrate masking

#5 | 2009-01-01
US20090004789A1
Electricity

Method of forming semiconductor device having stacked transistors

#6 | 2008-12-25
US20080315312A1
Electricity

Semiconductor devices having stacked structures

#7 | 2008-09-04
US20080211039A1
Electricity

Nonvolatile memory devices having metal silicide nanocrystals, methods of forming metal silicide nanocrystals, and methods of forming nonvolatile memory devices having metal silicide nanocrystals

#8 | 2008-05-29
US20080124921A1
Electricity

Method forming ohmic contact layer and metal wiring in semiconductor device

#9 | 2008-01-24
US20080020567A1
Electricity

Method of Manufacturing a Semiconductor Device

#10 | 2007-12-27
US20070295995A1
Electricity

Methods of forming a semiconductor device including buried bit line

#11 | 2007-12-06
US20070281424A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF ITS FORMATION

#12 | 2007-02-01
US20070026578A1
Electricity

Method for forming a silicided gate

#13 | 2006-12-14
US20060281305A1
Electricity

Methods of forming self-aligned silicide layers using multiple thermal processes

#14 | 2006-11-02
US20060246709A1
Electricity

Methods of forming semiconductor devices having stacked transistors

#15 | 2006-10-19
US20060234487A1
Electricity

Method of forming semiconductor device having stacked transistors

#16 | 2006-09-07
US20060199343A1
Electricity

Method of forming MOS transistor having fully silicided metal gate electrode

#17 | 2006-07-20
US20060160361A1
Electricity

Nickel salicide process and method of fabricating a semiconductor device using the same

#18 | 2006-05-04
US20060091436A1
Electricity

Methods of forming field effect transistors having metal silicide gate electrodes

#19 | 2006-04-13
US20060079074A1
Electricity

Method of forming relatively continuous silicide layers for semiconductor devices

#20 | 2006-03-23
US20060063380A1
Electricity

Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus

#21 | 2005-05-19
US20050106859A1
Electricity

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

InventorID:

3845784 ⎘