Gyeonggi-do
South Korea
21
2022-01-06
The entities that hold a legal rights for patent applications filed by inventor Jung Eun-Ji:
Eun-Ji Jung from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Cosmetic Composition For Sustaining Luster
#2 | 2009-12-31Methods of forming integrated circuit devices having stacked gate electrodes
#3 | 2009-11-12Method of forming semiconductor device having stacked transistors
#4 | 2009-07-30Methods for forming silicide conductors using substrate masking
#5 | 2009-01-01Method of forming semiconductor device having stacked transistors
#6 | 2008-12-25Semiconductor devices having stacked structures
#7 | 2008-09-04Nonvolatile memory devices having metal silicide nanocrystals, methods of forming metal silicide nanocrystals, and methods of forming nonvolatile memory devices having metal silicide nanocrystals
#8 | 2008-05-29Method forming ohmic contact layer and metal wiring in semiconductor device
#9 | 2008-01-24Method of Manufacturing a Semiconductor Device
#10 | 2007-12-27Methods of forming a semiconductor device including buried bit line
#11 | 2007-12-06SEMICONDUCTOR DEVICE AND METHOD OF ITS FORMATION
#12 | 2007-02-01Method for forming a silicided gate
#13 | 2006-12-14Methods of forming self-aligned silicide layers using multiple thermal processes
#14 | 2006-11-02Methods of forming semiconductor devices having stacked transistors
#15 | 2006-10-19Method of forming semiconductor device having stacked transistors
#16 | 2006-09-07Method of forming MOS transistor having fully silicided metal gate electrode
#17 | 2006-07-20Nickel salicide process and method of fabricating a semiconductor device using the same
#18 | 2006-05-04Methods of forming field effect transistors having metal silicide gate electrodes
#19 | 2006-04-13Method of forming relatively continuous silicide layers for semiconductor devices
#20 | 2006-03-23Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus
#21 | 2005-05-19Methods of forming silicide films with metal films in semiconductor devices and contacts including the same
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