Wayne Johnson

City:

Easton, Massachusetts

Country:

United States

Published Applications:

Last publication date:

2015-01-01

Top Assignees for applications by Wayne Johnson

The entities that hold a legal rights for patent applications filed by inventor Johnson Wayne:

Wayne Johnson from Easton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

HEMT structure with iron-doping-stop component and methods of forming

COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR

ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF MAKING SAME

DOUBLE ALUMINUM NITRIDE SPACERS FOR NITRIDE HIGH ELECTRON-MOBILITY TRANSISTORS

InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same

InventorID:

384652 ⎘