Inventor profile of:

Wei-Su Chen

City:

Hsinchu

Country:

Taiwan

Published Applications:

21

Last publication date:

2015-05-14

Top Assignees for applications by Wei-Su Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Wei-Su:

Recent patent applications by Chen Wei-Su

Wei-Su Chen from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-05-14
US20150129827A1
Electricity

Via structure, memory array structure, three-dimensional resistance memory and method of forming the same

#2 | 2011-06-30
US20110156201A1
Electricity

Air gap fabricating method

#3 | 2011-06-30
US20110155991A1
Electricity

Resistive memory device with an air gap

#4 | 2011-06-16
US20110140067A1
Electricity

Resistance switching memory

#5 | 2009-10-29
US20090269910A1
Electricity

Method of fabricating phase change memory device

#6 | 2009-07-30
US20090191367A1
Physics

Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same

#7 | 2009-05-21
US20090127535A1
Electricity

Phase change memory element

#8 | 2009-03-26
US20090081825A1
Electricity

Phase change memory device and fabricating method

#9 | 2009-01-08
US20090008695A1
Electricity

Semiconductor device and method for fabricating the same

#10 | 2008-07-10
US20080164504A1
Electricity

Phase change memory device and method for fabricating the same

#11 | 2008-07-10
US20080164454A1
Electricity

Phase change memory device

#12 | 2008-07-03
US20080160285A1
Physics

Tip array structure and fabricating method of tip structure

#13 | 2008-05-29
US20080121863A1
Physics

Phase change memory device and method for fabricating the same

#14 | 2007-12-27
US20070298330A1
Physics

Recticle pattern applied to mix-and-match lithography process and alignment method of thereof

#15 | 2007-12-20
US20070291533A1
Electricity

PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF

#16 | 2007-07-05
US20070152205A1
Electricity

Semiconductor memory device and phase change memory device

#17 | 2007-06-28
US20070148862A1
Electricity

Phase-change memory layer and method of manufacturing the same and phase-change memory cell

#18 | 2007-06-28
US20070148855A1
Electricity

Phase change memory device and fabricating method therefor

#19 | 2007-06-21
US20070138595A1
Electricity

Phase change memory cell and method of fabricating

#20 | 2007-05-31
US20070120105A1
Electricity

Lateral phase change memory with spacer electrodes

#21 | 2005-12-15
US20050274943A1
Physics

Organic bistable memory and method of manufacturing the same

InventorID:

3849335 ⎘