Ossining, New York
United States
8
2009-12-10
The entities that hold a legal rights for patent applications filed by inventor Fuller Nicholas C.:
Nicholas C. Fuller from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
#2 | 2009-08-13INTERCONNECT STRUCTURES WITH PARTIALLY SELF ALIGNED VIAS AND METHODS TO PRODUCE SAME
#3 | 2009-04-23Trilayer resist scheme for gate etching applications
#4 | 2009-01-15DUAL DAMASCENE PROCESS FLOW ENABLING MINIMAL ULK FILM MODIFICATION AND ENHANCED STACK INTEGRITY
#5 | 2008-11-20Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
#6 | 2008-02-21Trilayer resist scheme for gate etching applications
#7 | 2007-07-12Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity
#8 | 2007-02-22Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application
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