Mark C. Foisy

City:

Austin, Texas

Country:

United States

Published Applications:

Last publication date:

2009-01-22

Top Assignees for applications by Mark C. Foisy

The entities that hold a legal rights for patent applications filed by inventor Foisy Mark C.:

Mark C. Foisy from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Transistor with differently doped strained current electrode region

Method of forming device having a raised extension region

SEMICONDUCTOR DEVICE WITH MULTIPLE SEMICONDUCTOR LAYERS

Semiconductor process for forming stress absorbent shallow trench isolation structures

Semiconductor device with multiple semiconductor layers

InventorID:

3860430 ⎘