Inventor profile of:

Oleg Gluschenkov

City:

Poughkeepsie, New York

Country:

United States

Published Applications:

87

Last publication date:

2018-04-05

Top Assignees for applications by Oleg Gluschenkov

The entities that hold a legal rights for patent applications filed by inventor Gluschenkov Oleg:

Recent patent applications by Gluschenkov Oleg

Oleg Gluschenkov from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-04-05
US20180097112A1
Electricity

Transistor and method of forming same

#2 | 2017-06-08
US20170162694A1
Electricity

Transistor and method of forming same

#3 | 2016-12-29
US20160379830A1
Electricity

Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure

#4 | 2016-12-01
US20160351682A1
Electricity

Silicon germanium heterojunction bipolar transistor structure and method

#5 | 2016-07-14
US20160205757A1
Electricity

Dual pulse driven extreme ultraviolet (EUV) radiation source method

#6 | 2016-06-02
US20160155845A1
Electricity

Asymmetric field effect transistor cap layer

#7 | 2016-03-17
US20160081174A1
Electricity

Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas

#8 | 2015-11-19
US20150332927A1
Electricity

Gas cluster reactor for anisotropic film growth

#9 | 2014-04-17
US20140103366A1
Electricity

Silicon device on SI:C-OI and SGOI and method of manufacture

#10 | 2013-08-15
US20130210210A1
Electricity

Silicon germanium heterojunction bipolar transistor structure and method

#11 | 2012-06-14
US20120149159A1
Electricity

Structure and method for mobility enhanced MOSFETS with unalloyed silicide

#12 | 2012-06-14
US20120146092A1
Electricity

Structure and method for mobility enhanced MOSFETs with unalloyed silicide

#13 | 2010-06-24
US20100159664A1
Electricity

Silicon germanium heterojunction bipolar transistor structure and method

#14 | 2010-04-01
US20100080446A1
Physics

Inline low-damage automated failure analysis

#15 | 2009-12-24
US20090317924A1
Electricity

Method for optimizing the routing of wafers/lots based on yield

#16 | 2009-12-10
US20090302387A1
Electricity

Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof

#17 | 2009-10-29
US20090267149A1
Electricity

Source/drain junction for high performance MOSFET formed by selective EPI process

#18 | 2009-07-02
US20090166770A1
Electricity

METHOD OF FABRICATING GATE ELECTRODE FOR GATE OF MOSFET AND STRUCTURE THEREOF

#19 | 2009-06-18
US20090155487A1
Electricity

ULTRAVIOLET UV PHOTO PROCESSING OR CURING OF THIN FILMS WITH SURFACE TREATMENT

#20 | 2009-06-11
US20090146181A1
Electricity

INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS

#21 | 2009-06-04
US20090142894A1
Electricity

Method for fabricating a semiconductor structure

#22 | 2009-05-21
US20090132985A1
Physics

Structure for on-chip electromigration monitoring system

#23 | 2009-04-30
US20090108300A1
Electricity

Silicon germanium heterojunction bipolar transistor structure and method

#24 | 2009-02-05
US20090032840A1
Electricity

Semiconductor device and method of manufacture

#25 | 2008-12-04
US20080299732A1
Electricity

Method for reducing overlap capacitance in field effect transistors

#26 | 2008-10-30
US20080265931A1
Physics

On-chip electromigration monitoring

#27 | 2008-10-30
US20080265282A1
Electricity

Silicon germanium heterojunction bipolar transistor structure and method

#28 | 2008-10-02
US20080242069A1
Electricity

Hybrid SOI/bulk semiconductor transistors

#29 | 2008-08-28
US20080206965A1
Electricity

STRAINED SILICON MADE BY PRECIPITATING CARBON FROM Si(1-x-y)GexCy ALLOY

#30 | 2008-08-07
US20080185583A1
Electricity

Structure and method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process

#31 | 2008-07-10
US20080166848A1
Electricity

Method for reducing overlap capacitance in field effect transistors

#32 | 2008-07-10
US20080164491A1
Electricity

Structure and method for mobility enhanced MOSFETs with unalloyed silicide

#33 | 2008-06-19
US20080142852A1
Electricity

SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT SURFACE DIRECTIONS

#34 | 2008-04-17
US20080090366A1
Electricity

Hybrid SOI-bulk semiconductor transistors

#35 | 2008-03-20
US20080070366A1
Electricity

Method for forming a multi-gate device with high k dielectric for channel top surface

#36 | 2008-03-13
US20080064172A1
Electricity

Stressed semiconductor device structures having granular semiconductor material

#37 | 2008-02-28
US20080050847A1
Electricity

SINGLE IC-CHIP DESIGN ON WAFER WITH AN EMBEDDED SENSOR UTILIZING RF CAPABILITIES TO ENABLE REAL-TIME DATA TRANSMISSION

#38 | 2008-01-31
US20080026512A1
Electricity

INTEGRATED CIRCUIT CHIP WITH FETS HAVING MIXED BODY THICKNESSES AND METHOD OF MANUFACTURE THEREOF

#39 | 2008-01-24
US20080020522A1
Electricity

Field effect transistors with dielectric source drain halo regions and reduced miller capacitance

#40 | 2008-01-03
US20080001227A1
Electricity

Method for manufacturing double gate finFET with asymmetric halo

#41 | 2007-11-08
US20070257314A1
Electricity

Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereof

#42 | 2007-11-01
US20070254443A1
Electricity

Method for reducing overlap capacitance in field effect transistors

#43 | 2007-10-11
US20070238267A1
Electricity

Epitaxy of Silicon-Carbon Substitutional Solid Solutions by Ultra-Fast Annealing of Amorphous Material

#44 | 2007-10-11
US20070235806A1
Electricity

Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof

#45 | 2007-08-30
US20070202639A1
Electricity

Dual stressed SOI substrates

#46 | 2007-07-26
US20070170527A1
Electricity

Structure for reducing overlap capacitance in field effect transistors

#47 | 2007-07-19
US20070164768A1
Physics

On-chip electromigration monitoring system

#48 | 2007-07-12
US20070161169A1
Electricity

Field effect transistors with dielectric source drain halo regions and reduced miller capacitance

#49 | 2007-03-22
US20070063278A1
Electricity

Highly manufacturable SRAM cells in substrates with hybrid crystal orientation

#50 | 2007-03-22
US20070063277A1
Electricity

MULTIPLE LOW AND HIGH K GATE OXIDES ON SINGLE GATE FOR LOWER MILLER CAPACITANCE AND IMPROVED DRIVE CURRENT

#51 | 2007-02-08
US20070032028A1
Electricity

Structure for reducing overlap capacitance in field effect transistors

#52 | 2006-11-16
US20060255375A1
Electricity

Anti-halo compensation

#53 | 2006-10-26
US20060237803A1
Electricity

Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method

#54 | 2006-10-19
US20060234398A1
Electricity

SINGLE IC-CHIP DESIGN ON WAFER WITH AN EMBEDDED SENSOR UTILIZING RF CAPABILITIES TO ENABLE REAL-TIME DATA TRANSMISSION

#55 | 2006-10-05
US20060223290A1
Electricity

Method of producing highly strained PECVD silicon nitride thin films at low temperature

#56 | 2006-07-20
US20060160317A1
Electricity

STRUCTURE AND METHOD TO ENHANCE STRESS IN A CHANNEL OF CMOS DEVICES USING A THIN GATE

#57 | 2006-07-06
US20060148215A1
Electricity

Method of fabricating a field effect transistor having improved junctions

#58 | 2006-06-22
US20060131659A1
Electricity

CMOS transistor structure including film having reduced stress by exposure to atomic oxygen

#59 | 2006-06-15
US20060125008A1
Electricity

Dual stressed SOI substrates

#60 | 2006-06-08
US20060118825A1
Electricity

Nanocircuit and self-correcting etching method for fabricating same

#61 | 2006-05-25
US20060108651A1
Electricity

Lowered Source/Drain Transistors

#62 | 2006-05-18
US20060105516A1
Electricity

Oxidation method for altering a film structure

#63 | 2006-05-11
US20060099783A1
Electricity

Self-aligned low-k gate cap

#64 | 2006-03-30
US20060068575A1
Electricity

Gate electrode forming methods using conductive hard mask

#65 | 2006-03-23
US20060060925A1
Electricity

Semiconductor device structure with active regions having different surface directions and methods

#66 | 2006-03-02
US20060043421A1
Electricity

Multi-gate device with high k dielectric for channel top surface

#67 | 2006-02-23
US20060040439A1
Electricity

Temperature stable metal nitride gate electrode

#68 | 2006-01-05
US20060001162A1
Electricity

Nitride and polysilicon interface with titanium layer

#69 | 2005-12-22
US20050282325A1
Electricity

Structure and method to improve channel mobility by gate electrode stress modification

#70 | 2005-12-22
US20050280099A1
Electricity

Temperature stable metal nitride gate electrode

#71 | 2005-12-01
US20050264320A1
Electricity

Logic circuits having linear and cellular gate transistors

#72 | 2005-11-24
US20050260808A1
Electricity

MOSFET structure with high mechanical stress in the channel

#73 | 2005-11-03
US20050245017A1
Electricity

Structure and method to improve channel mobility by gate electrode stress modification

#74 | 2005-09-15
US20050202672A1
Electricity

Method for manufacturing tungsten/polysilicon word line structure in vertical DRAM

#75 | 2005-09-08
US20050194699A1
Electricity

Method of fabricating mobility enhanced CMOS devices

#76 | 2005-09-01
US20050189589A1
Electricity

Hybrid SOI/bulk semiconductor transistors

#77 | 2005-08-16
US10250257
-

Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

#78 | 2005-07-07
US20050148142A1
Electricity

High performance FET with laterally thin extension

#79 | 2005-06-21
US10355726
-

Gate metal recess for oxidation protection and parasitic capacitance reduction

#80 | 2005-06-02
US20050118764A1
Electricity

Forming gate oxides having multiple thicknesses

#81 | 2005-05-19
US20050106799A1
Electricity

Stressed semiconductor device structures having granular semiconductor material

#82 | 2005-05-10
US10397761
-

Trench isolation employing a doped oxide trench fill

#83 | 2005-05-05
US20050093081A1
Electricity

Oxidation method for altering a film structure and CMOS transistor structure formed therewith

#84 | 2005-05-05
US20050093059A1
Electricity

Structure and method to improve channel mobility by gate electrode stress modification

#85 | 2005-04-28
US20050087824A1
Electricity

High performance FET with laterally thin extension

#86 | 2005-04-28
US20050087809A1
Electricity

Nanocircuit and self-correcting etching method for fabricating same

#87 | 2005-01-04
US10604562
-

Method of fabricating a buried collar

InventorID:

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