Mark Robert Visokay

Dual work function CMOS devices utilizing carbide based electrodes

Structure and method for a triple-gate transistor with reverse STI

Structure for dual work function metal gate electrodes by control of interface dipoles

Work function control of metals

Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials

Work function control of metals

Dual work function CMOS devices utilizing carbide based electrodes

Work function separation for fully silicided gates

Methods that mitigate excessive source/drain silicidation in full gate silicidation metal gate flows

Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation

Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials

Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon

Triple-gate MOSFET transistor and methods for fabricating the same

Method for fabricating split gate transistor device having high-k dielectrics

MOS transistor gates with thin lower metal silicide and methods for making the same

Method for integrating high-k dielectrics in transistor devices

Methods for fabricating a triple-gate MOSFET transistor