Hsinchu
Taiwan
18
2009-05-07
The entities that hold a legal rights for patent applications filed by inventor Chen Hung-Wei:
Hung-Wei Chen from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
#2 | 2008-09-18BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
#3 | 2008-09-18MOS transistors with selectively strained channels
#4 | 2008-06-19Dual metal silicides for lowering contact resistance
#5 | 2007-11-29FIN-FET device structure formed employing bulk semiconductor substrate
#6 | 2007-11-22Transistors with stressed channels
#7 | 2007-09-20Diffusion topography engineering for high performance CMOS fabrication
#8 | 2007-03-08Hybrid Schottky source-drain CMOS for high mobility and low barrier
#9 | 2007-02-01Structure for a multiple-gate FET device and a method for its fabrication
#10 | 2006-12-14FinFET split gate EEPROM structure and method of its fabrication
#11 | 2006-06-15Capacitor-less 1T-DRAM cell with Schottky source and drain
#12 | 2006-05-11Semiconductor structure and method for integrating SOI devices and bulk devices
#13 | 2006-05-04Self-aligned gated p-i-n diode for ultra-fast switching
#14 | 2006-04-27Method for manufacturing a semiconductor device with reduced floating body effect
#15 | 2006-03-09CMOS logic gate fabricated on hybrid crystal orientations and method of forming thereof
#16 | 2005-12-15Semiconductor nano-wire devices and methods of fabrication
#17 | 2005-09-29Method for reducing a short channel effect for NMOS devices in SOI circuits
#18 | 2005-05-05Semiconductor-on-insulator chip with<100>-oriented transistors
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