Inventor profile of:

Joseph John Sumakeris

City:

Apex, North Carolina

Country:

United States

Published Applications:

13

Last publication date:

2009-05-28

Top Assignees for applications by Joseph John Sumakeris

The entities that hold a legal rights for patent applications filed by inventor Sumakeris Joseph John:

Recent patent applications by Sumakeris Joseph John

Joseph John Sumakeris from Apex, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-05-28
US20090136686A1
Electricity

Methods for controllably induction heating an article

#2 | 2008-06-05
US20080127894A1
Electricity

Housing assembly for an induction heating device including liner or susceptor coating

#3 | 2008-03-06
US20080054412A1
Chemistry; metallurgy

Reduction of carrot defects in silicon carbide epitaxy

#4 | 2007-09-27
US20070221614A1
Electricity

Method to reduce stacking fault nucleation sites and reduce V drift in bipolar devices

#5 | 2007-05-17
US20070108450A1
Chemistry; metallurgy

Reduction of carrot defects in silicon carbide epitaxy

#6 | 2007-05-10
US20070101939A1
Chemistry; metallurgy

Deposition systems and susceptor assemblies for depositing a film on a substrate

#7 | 2007-03-22
US20070065577A1
Chemistry; metallurgy

Directed reagents to improve material uniformity

#8 | 2006-11-02
US20060243985A1
Electricity

Sequential lithographic methods to reduce stacking fault nucleation sites

#9 | 2006-09-28
US20060216416A1
Chemistry; metallurgy

Methods for controlling formation of deposits in a deposition system and deposition methods including the same

#10 | 2005-09-22
US20050205872A1
Electricity

Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls

#11 | 2005-05-24
US10017492
-

Induction heating devices and methods for controllably heating an article

#12 | 2005-04-21
US20050082542A1
Electricity

Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

#13 | 2005-03-24
US20050064723A1
Electricity

Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices

InventorID:

3955129 ⎘