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Inventor profile of:

Scott Robins

City:

San Jose, California

Country:

United States

Published Applications:

39

Last publication date:

2012-01-10

Top Assignees for applications by Scott Robins

The entities that hold a legal rights for patent applications filed by inventor Robins Scott:

Recent patent applications by Robins Scott

Scott Robins from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-01-10
US12271758
-

Thyristor semiconductor memory and method of manufacture

 #2 | 2011-09-13
US12555665
-

Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure

 #3 | 2011-06-28
US11581316
-

Fin thyristor-based semiconductor device

 #4 | 2011-02-22
US11881159
-

Thyristor based memory cell

 #5 | 2011-02-22
US11881049
-

Thyristor based memory cell

 #6 | 2009-06-30
US11361869
-

Reducing effects of parasitic transistors in thyristor-based memory using an isolation or damage region

 #7 | 2009-06-25
US20090162979A1
Physics

Thyristor device with carbon lifetime adjustment implant and its method of fabrication

 #8 | 2009-06-04
US20090140288A1
Electricity

High ion/Ioff SOI MOSFET using body voltage control

 #9 | 2009-02-10
US11522037
-

High Ion/Ioff SOI MOSFET using body voltage control

 #10 | 2009-02-10
US11483859
-

Thyristor device with carbon lifetime adjustment implant and its method of fabrication

 #11 | 2008-05-20
US10794843
-

Thyristor-based device with trench dielectric material

 #12 | 2008-01-22
US11086113
-

Thyristor-based device having dual control ports

 #13 | 2007-07-17
US11194184
-

Data restore in thryistor based memory devices

 #14 | 2007-02-27
US11238773
-

Trench isolation for thyristor-based device

 #15 | 2007-01-02
US11026400
-

Thyristor-based semiconductor memory device and its method of manufacture

 #16 | 2006-11-14
US10238572
-

Fin thyristor-based semiconductor device

 #17 | 2006-10-24
US11159738
-

Self-aligned thin capacitively-coupled thyristor structure

 #18 | 2006-09-19
US10746758
-

High Ion/Ioff SOI MOSFET using body voltage control

 #19 | 2006-07-11
US10670881
-

Thyristor device with carbon lifetime adjustment implant and its method of fabrication

 #20 | 2006-06-20
US11134004
-

Reference cells for TCCT based memory cells

 #21 | 2006-05-30
US10982443
-

Thyristor having a first emitter with relatively lightly doped portion to the base

 #22 | 2006-05-30
US10860194
-

Method and system for writing data to memory cells

 #23 | 2006-05-23
US10682283
-

Shunt connection to the emitter of a thyristor

 #24 | 2006-05-02
US10739859
-

Gated-thyristor approach having angle-implanted base region

 #25 | 2006-04-18
US10262696
-

Buried emitter contact for thyristor-based semiconductor device

 #26 | 2006-03-21
US10970085
-

Varied trench depth for thyristor isolation

 #27 | 2006-02-14
US10262729
-

Trench isolation for thyristor-based device

 #28 | 2005-12-27
US10730755
-

Method for making a recessed thyristor control port

 #29 | 2005-12-27
US10288927
-

Thyristor-based device having a reduced-resistance contact to a buried emitter region

 #30 | 2005-11-15
US10288953
-

Thyristor-based device having dual control ports

 #31 | 2005-10-20
US20050233506A1
Physics

Semiconductor device with leakage implant and method of fabrication

 #32 | 2005-09-13
US10695171
-

Data restore in thryistor based memory devices

 #33 | 2005-09-06
US10100705
-

Reference cells for TCCT based memory cells

 #34 | 2005-07-05
US10262792
-

Method of manufacturing a thyristor device with a control port in a trench

 #35 | 2005-06-28
US10890031
-

Self-aligned thin capacitively-coupled thyristor structure

 #36 | 2005-05-31
US10838595
-

Reference cells for TCCT based memory cells

 #37 | 2005-05-10
US10666220
-

Stability in thyristor-based memory device

 #38 | 2005-05-03
US10253350
-

Increased base-emitter capacitance

 #39 | 2005-03-29
US10785166
-

Carrier coupler for thyristor-based semiconductor device
InventorID:

3958182 ⎘