Daniel T. Pham

City:

Austin, Texas

Country:

United States

Published Applications:

Last publication date:

2011-08-11

Top Assignees for applications by Daniel T. Pham

The entities that hold a legal rights for patent applications filed by inventor Pham Daniel T.:

Daniel T. Pham from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Power MOSFET with a gate structure of different material

LDMOS with channel stress

Method for forming a double-gated semiconductor device

InventorID:

3962669 ⎘