Inventor profile of:

Stephen McConnell Gates

City:

Ossining, New York

Country:

United States

Published Applications:

18

Last publication date:

2009-12-10

Top Assignees for applications by Stephen McConnell Gates

The entities that hold a legal rights for patent applications filed by inventor Gates Stephen McConnell:

Recent patent applications by Gates Stephen McConnell

Stephen McConnell Gates from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-12-10
US20090304951A1
Electricity

ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS

#2 | 2009-12-03
US20090297823A1
Electricity

ULTRA LOW K (ULK) SiCOH FILM AND METHOD

#3 | 2009-06-11
US20090146265A1
Chemistry; metallurgy

Ultra low Îș plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

#4 | 2008-12-18
US20080311744A1
Electricity

Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics

#5 | 2008-11-20
US20080286494A1
Electricity

ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS

#6 | 2008-02-21
US20080044668A1
Electricity

Ultralow dielectric constant layer with controlled biaxial stress

#7 | 2008-02-14
US20080038917A1
Electricity

Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics

#8 | 2008-01-31
US20080026203A1
Electricity

ULTRA LOW K (ULK) SiCOH FILM AND METHOD

#9 | 2007-10-11
US20070237970A1
Electricity

DIFFUSION BARRIER WITH LOW DIELECTRIC CONSTANT AND SEMICONDUCTOR DEVICE CONTAINING SAME

#10 | 2007-08-07
US10320111
-

Diffusion barrier with low dielectric constant and semiconductor device containing same

#11 | 2006-07-13
US20060154086A1
Electricity

Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics

#12 | 2006-04-13
US20060079099A1
Chemistry; metallurgy

Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

#13 | 2005-12-15
US20050276930A1
Electricity

Ultra low k (ULK) SiCOH film and method

#14 | 2005-10-25
US10766249
-

Electronic structures with reduced capacitance

#15 | 2005-09-22
US20050206004A1
Electricity

Method of forming a ceramic diffusion barrier layer

#16 | 2005-09-13
US9897200
-

Semiconductor devices containing a discontinuous cap layer and methods for forming same

#17 | 2005-08-25
US20050184397A1
Electricity

Structures and methods for integration of ultralow-k dielectrics with improved reliability

#18 | 2005-04-28
US20050087876A1
Electricity

Interconnect structures incorporating low-k dielectric barrier films

InventorID:

3962708 ⎘