Ryuta Maruyama

City:

Kyoto

Country:

Japan

Published Applications:

Last publication date:

2009-06-11

Top Assignees for applications by Ryuta Maruyama

The entities that hold a legal rights for patent applications filed by inventor Maruyama Ryuta:

Ryuta Maruyama from Kyoto, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Vertical double diffused MOS transistor with a trench gate structure

InventorID:

3964579 ⎘