Inventor profile of:

Jaydeb Goswami

City:

Boise, Idaho

Country:

United States

Published Applications:

31

Last publication date:

2024-02-29

Top Assignees for applications by Jaydeb Goswami

The entities that hold a legal rights for patent applications filed by inventor Goswami Jaydeb:

Recent patent applications by Goswami Jaydeb

Jaydeb Goswami from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-02-29
US20240074160A1
Electricity

INTEGRATION OF MEMORY ARRAY WITH PERIPHERY

#2 | 2021-11-04
US20210343732A1
Electricity

Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

#3 | 2021-06-10
US20210175239A1
Electricity

Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor

#4 | 2021-01-07
US20210005455A1
Electricity

Atom implantation for reduction of compressive stress

#5 | 2018-06-21
US20180175039A1
Electricity

Conductive structures, wordlines and transistors

#6 | 2018-05-17
US20180138182A1
Electricity

Conductive structures, wordlines and transistors

#7 | 2016-04-28
US20160118340A1
Electricity

Low-Resistance Interconnects and Methods of Making Same

#8 | 2015-10-22
US20150303147A1
Electricity

Semiconductor Constructions, Methods of Forming Conductive Structures and Methods of Forming DRAM Cells

#9 | 2014-09-04
US20140248760A1
Electricity

Methods of forming dual gate structures

#10 | 2014-05-01
US20140117302A1
Electricity

Phase Change Memory Cells, Methods Of Forming Phase Change Memory Cells, And Methods Of Forming Heater Material For Phase Change Memory Cells

#11 | 2014-02-20
US20140048943A1
Electricity

Semiconductor constructions, methods of forming conductive structures and methods of forming DRAM cells

#12 | 2014-01-09
US20140010018A1
Electricity

Nanodot charge storage structures

#13 | 2013-11-07
US20130295760A1
Electricity

Incorporating impurities using a mask

#14 | 2013-10-10
US20130264713A1
Electricity

Methods of forming conductive structures and methods of forming DRAM cells

#15 | 2013-08-22
US20130214248A1
Electricity

Solid state lighting devices with semi-polar facets and associated methods of manufacturing

#16 | 2012-10-11
US20120258585A1
Electricity

Incorporating impurities using a discontinuous mask

#17 | 2012-10-11
US20120256269A1
Electricity

Semiconductor devices including dual gate structures and methods of fabrication

#18 | 2012-08-09
US20120199807A1
Electricity

Semiconductor structure and semiconductor device including a diode structure and methods of forming same

#19 | 2011-12-22
US20110309324A1
Electricity

Solid state devices with semi-polar facets and associated methods of manufacturing

#20 | 2011-10-20
US20110254072A1
Electricity

Nanodot charge storage structures and methods

#21 | 2011-09-08
US20110216585A1
Chemistry; metallurgy

METAL CONTAINING MATERIALS

#22 | 2011-04-28
US20110095427A1
Electricity

Low-resistance interconnects and methods of making same

#23 | 2010-07-08
US20100171178A1
Electricity

Semiconductor devices including dual gate structures

#24 | 2009-11-19
US20090283907A1
Electricity

Low-resistance interconnects and methods of making same

#25 | 2009-02-05
US20090032949A1
Electricity

Method of depositing Tungsten using plasma-treated tungsten nitride

#26 | 2008-11-06
US20080273410A1
Electricity

Tungsten digitlines

#27 | 2008-10-09
US20080246124A1
Electricity

PLASMA TREATMENT OF INSULATING MATERIAL

#28 | 2008-07-17
US20080171437A1
Electricity

Methods of forming titanium-containing materials

#29 | 2008-02-14
US20080038920A1
Electricity

System and method of selectively depositing Ruthenium films by digital chemical vapor deposition

#30 | 2006-12-28
US20060292871A1
Electricity

Semiconductor processing methods

#31 | 2005-06-16
US20050127461A1
Electricity

Molecular modifications of metal/dielectric interfaces

InventorID:

397536 ⎘