🔗 Permalink

Inventor profile of:

Je Won KIM

City:

Suwon

Country:

South Korea

Published Applications:

Last publication date:

2013-08-22

Top Assignees for applications by Je Won KIM

The entities that hold a legal rights for patent applications filed by inventor KIM Je Won:

SAMSUNG ELECTRO-MECHANICS CO., LTD. 9 Suwon, South Korea
SAMSUNG ELECTRO-MECHANICS CO., LTD. 5 Kyungki-do, South Korea
Samsung LED Co., Ltd. 3 Gyunggi-do, South Korea
SAMSUNG ELECTRONICS CO., LTD. 2 Seoul, South Korea
SAMSUNG LED CO., LTD. 1 Suwon, South Korea
Samsung LED Co., Ltd. 1 Suwon, Gyunggi-do, South Korea
SAMSUNG ELECTRO-MECHANICS CO., LTD. 1 Gyunggi-do, South Korea
SAMSUNG ELECTRONICS CO., LTD. 1 Suwon, South Korea

Recent patent applications by KIM Je Won

Je Won KIM from Suwon, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-08-22

US20130214250A1

Electricity

NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE

#2 | 2012-02-23

US20120043557A1

Electricity

Semiconductor light-emitting device with improved light extraction efficiency

#3 | 2011-02-17

US20110037086A1

Electricity

Nitride based semiconductor light-emitting device

#4 | 2010-09-16

US20100230657A1

Electricity

Nitride semiconductor light emitting device

#5 | 2010-05-06

US20100112742A1

Electricity

Nitride semiconductor device and method for making same

#6 | 2010-03-18

US20100065877A1

Electricity

Semiconductor light-emitting device with improved light extraction efficiency

#7 | 2007-12-13

US20070284593A1

Electricity

Nitride-based semiconductor light emitting diode

#8 | 2007-10-04

US20070228388A1

Electricity

Nitride-based semiconductor light emitting device

#9 | 2007-06-28

US20070145406A1

Electricity

Nitride semiconductor light emitting device

#10 | 2007-05-03

US20070096143A1

Electricity

Nitride semiconductor light emitting device and method for manufacturing the same

#11 | 2007-04-26

US20070090339A1

Electricity

Nitride semiconductor light emitting device

#12 | 2007-04-19

US20070085097A1

Electricity

Nitride semiconductor light emitting device

#13 | 2007-01-18

US20070012939A1

Electricity

Flip chip light emitting diode and method of manufacturing the same

#14 | 2007-01-11

US20070007584A1

Electricity

Nitride semiconductor light emitting diode and method of manufacturing the same

#15 | 2006-11-23

US20060261358A1

Electricity

Flip chip light emitting diode and method of manufacturing the same

#16 | 2006-10-12

US20060226416A1

Electricity

Nitride semiconductor device

#17 | 2006-05-04

US20060091376A1

Electricity

Semiconductor light-emitting device with improved light extraction efficiency

#18 | 2006-04-27

US20060086932A1

Electricity

Nitride based semiconductor device

#19 | 2005-12-29

US20050285125A1

Electricity

Nitride based semiconductor device

#20 | 2005-12-08

US20050269583A1

Electricity

Gallium nitride-based semiconductor light-emitting device and method of fabricatiing the same

#21 | 2005-12-01

US20050263783A1

Electricity

Nitride semiconductor light-emitting device

#22 | 2005-10-13

US20050224816A1

Electricity

Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof

#23 | 2005-08-18

US20050179027A1

Electricity

Nitride based semiconductor light-emitting device

InventorID:

397537 ⎘