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Inventor profile of:

William J. Schaff

City:

Ithaca, New York

Country:

United States

Published Applications:

8

Last publication date:

2009-11-24

Top Assignees for applications by William J. Schaff

The entities that hold a legal rights for patent applications filed by inventor Schaff William J.:

CORNELL RESEARCH FOUNDATION, INC. 8 Ithaca, NY United States
The Regents of the University of California 1 Oakland, CA United States

Recent patent applications by Schaff William J.

William J. Schaff from Ithaca, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-11-24

US9858337

Method of forming an AlN coated heterojunction field effect transistor

#2 | 2009-09-10

US20090227093A1

Chemistry; metallurgy

Patterning During Film Growth

#3 | 2009-07-02

US20090165816A1

Highly doped III-nitride semiconductors

#4 | 2007-05-15

US10445711

Broad spectrum solar cell

#5 | 2005-10-11

US10146466

Highly doped III-nitride semiconductors

#6 | 2005-08-18

US20050179050A1

Highly doped III-nitride semiconductors

#7 | 2005-08-18

US20050179047A1

Highly doped III-nitride semiconductors

#8 | 2005-05-03

US10140774

Highly doped III-nitride semiconductors

InventorID:

3977139 ⎘