Oxnard, California
United States
12
2018-03-27
The entities that hold a legal rights for patent applications filed by inventor Burnham Shawn D.:
Shawn D. Burnham from Oxnard, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Stepped field plate wide bandgap field-effect transistor and method
#2 | 2016-02-02Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs
#3 | 2015-11-17Enhancement mode normally-off gallium nitride heterostructure field effect transistor
#4 | 2015-09-22Stepped field plate wide bandgap field-effect transistor and method
#5 | 2014-06-10Enhancement and depletion mode GaN HMETs on the same substrate
#6 | 2014-05-20Enhancement mode normally-off gallium nitride heterostructure field effect transistor
#7 | 2014-04-01Apparatus and method for reducing the interface resistance in GaN heterojunction FETs
#8 | 2013-12-12NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND METHOD OF MAKING THE SAME
#9 | 2013-05-16Self-aligned sidewall gate GaN HEMT
#10 | 2013-02-26Self aligned sidewall gate GaN HEMT
#11 | 2013-01-03AlGaN/GaN hybrid MOS-HFET
#12 | 2012-02-28Two stage plasma etching method for enhancement mode GaN HFET
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