Dmytro Chumakov

DRAM cell based on conductive nanochannel plate

Mask-based silicidation for FEOL defectivity reduction and yield boost

DOPANT MARKER FOR PRECISE RECESS CONTROL

In-situ measurement of feature dimensions

Integrated circuits having place-efficient capacitors and methods for fabricating the same

Shrinkage of critical dimensions in a semiconductor device by selective growth of a mask material

Dopant marker for precise recess control

Integrated circuits having place-efficient capacitors and methods for fabricating the same

DRAM cell based on conductive nanochannel plate

Integrated circuit fabrication methods utilizing embedded hardmask layers for high resolution patterning

Shrinkage of contact elements and vias in a semiconductor device by incorporating additional tapering material

Dopant marker for precise recess control

Method and system for extracting samples after patterning of microstructure devices

Test structure for ILD void testing and contact resistance measurement in a semiconductor device

Stress reduction in chip packaging by a stress compensation region formed around the chip

Chip package including multiple sections for reducing chip package interaction

Semiconductor device comprising a buried capacitor formed in the contact level

Semiconductor Device Comprising Sophisticated Conductive Elements in a Dielectric Material System Formed by Using a Barrier Layer

Semiconductor device comprising a capacitor formed in the contact level

Method and system for particles analysis in microstructure devices by isolating particles

Method and apparatus for determining surface characteristics by using SPM techniques with acoustic excitation and real-time digitizing