Inventor profile of:

David C. Gilmer

City:

Austin, Texas

Country:

United States

Published Applications:

14

Last publication date:

2009-11-19

Top Assignees for applications by David C. Gilmer

The entities that hold a legal rights for patent applications filed by inventor Gilmer David C.:

Recent patent applications by Gilmer David C.

David C. Gilmer from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2009-11-19
US20090286387A1
Electricity

Modulation of Tantalum-Based Electrode Workfunction

#2 | 2008-09-18
US20080224185A1
Electricity

Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same

#3 | 2008-02-28
US20080048270A1
Electricity

Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities

#4 | 2008-01-03
US20080001202A1
Electricity

Method of making metal gate transistors

#5 | 2007-12-13
US20070284677A1
Electricity

Metal oxynitride gate

#6 | 2007-08-02
US20070178633A1
Electricity

Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same

#7 | 2007-04-05
US20070077698A1
Electricity

Method for fabricating dual-metal gate device

#8 | 2006-10-19
US20060234436A1
Electricity

Method of forming a semiconductor device having a high-k dielectric

#9 | 2006-08-03
US20060172516A1
Electricity

Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same

#10 | 2006-05-04
US20060094259A1
Electricity

Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process

#11 | 2006-03-21
US10969634
-

Method for forming a layer using a purging gas in a semiconductor process

#12 | 2005-12-22
US20050282326A1
Electricity

Method for fabricating dual-metal gate device

#13 | 2005-12-06
US10400896
-

Method for fabricating dual-metal gate device

#14 | 2005-06-23
US20050136633A1
Electricity

Blocking layer for silicide uniformity in a semiconductor transistor

InventorID:

4062585 ⎘