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Inventor profile of:

Hitoshi NOGUCHI

City:

Annaka

Country:

Japan

Published Applications:

15

Last publication date:

2019-09-12

Top Assignees for applications by Hitoshi NOGUCHI

The entities that hold a legal rights for patent applications filed by inventor NOGUCHI Hitoshi:

Recent patent applications by NOGUCHI Hitoshi

Hitoshi NOGUCHI from Annaka, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-09-12
US20190279867A1
Electricity

Method of making a peeled magnesium oxide substrate using laser irradiation

 #2 | 2014-02-13
US20140041574A1
Chemistry; metallurgy

Diamond producing method and DC plasma enhanced CVD apparatus

 #3 | 2013-09-19
US20130239880A1
Chemistry; metallurgy

Base material for growing single crystal diamond and method for producing single crystal diamond substrate

 #4 | 2013-08-29
US20130220214A1
Chemistry; metallurgy

BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE

 #5 | 2012-09-06
US20120225308A1
Chemistry; metallurgy

MULTILAYER SUBSTRATE AND METHOD FOR PRODUCING THE SAME, DIAMOND FILM AND METHOD FOR PRODUCING THE SAME

 #6 | 2012-09-06
US20120225307A1
Chemistry; metallurgy

MULTILAYER SUBSTRATE AND METHOD FOR PRODUCING THE SAME, DIAMOND FILM AND METHOD FOR PRODUCING THE SAME

 #7 | 2011-12-29
US20110315074A1
Chemistry; metallurgy

Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material

 #8 | 2011-04-14
US20110084285A1
Chemistry; metallurgy

BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE

 #9 | 2011-04-07
US20110081531A1
Chemistry; metallurgy

BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE

 #10 | 2010-11-25
US20100294196A1
Electricity

Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate

 #11 | 2010-07-15
US20100178730A1
Chemistry; metallurgy

Direct-current plasma CVD apparatus and method for producing diamond using the same

 #12 | 2010-07-15
US20100178234A1
Chemistry; metallurgy

Multilayer substrate and method for producing the same, diamond film and method for producing the same

 #13 | 2010-07-15
US20100175613A1
Chemistry; metallurgy

Base material for forming single crystal diamond film and method for producing single crystal diamond using the same

 #14 | 2009-07-09
US20090176114A1
Chemistry; metallurgy

Base substrate for epitaxial diamond film, method for producing the base substrate for epitaxial diamond film, epitaxial diamond film produced with the base substrate for epitaxial diamond film, and method for producing the epitaxial diamond film

 #15 | 2005-12-27
US10854710
-

Stencil mask for ion implantation
InventorID:

407731 ⎘