Inventor profile of:

Wei Xia

City:

Irvine, California

Country:

United States

Published Applications:

33

Last publication date:

2015-04-23

Top Assignees for applications by Wei Xia

The entities that hold a legal rights for patent applications filed by inventor Xia Wei:

Recent patent applications by Xia Wei

Wei Xia from Irvine, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-04-23
US20150108558A1
Electricity

SCALABLE INTEGRATED MIM CAPACITOR USING GATE METAL

#2 | 2014-02-20
US20140050007A1
Electricity

FinFET based one-time programmable device

#3 | 2014-02-06
US20140038404A1
Electricity

Method of fabricating a flash memory comprising a high-K dielectric and a metal gate

#4 | 2013-11-21
US20130309833A1
Electricity

Decoupling composite capacitor in a semiconductor wafer

#5 | 2013-10-31
US20130288439A1
Electricity

Zener diode structure and process

#6 | 2013-10-03
US20130256804A1
Electricity

ROM arrays having memory cell transistors programmed using metal gates

#7 | 2013-09-26
US20130248961A1
Electricity

Embedded flash memory

#8 | 2013-05-02
US20130105942A1
Electricity

FinFET devices

#9 | 2013-04-25
US20130099317A1
Electricity

Fin-based adjustable resistor

#10 | 2013-04-04
US20130082351A1
Electricity

MIM capacitor having a local interconnect metal electrode and related structure

#11 | 2013-04-04
US20130082347A1
Electricity

One time programmable structure using a gate last high-K metal gate process

#12 | 2013-04-04
US20130082330A1
Electricity

Zener diode structure and process

#13 | 2013-03-28
US20130075729A1
Electricity

Fin-based bipolar junction transistor and method for fabrication

#14 | 2013-03-14
US20130062692A1
Electricity

Half-FinFET semiconductor device and related method

#15 | 2013-02-28
US20130051112A1
Electricity

FinFET based one-time programmable device and related method

#16 | 2013-01-17
US20130017658A1
Electricity

Method for fabricating a MOS transistor with reduced channel length variation

#17 | 2013-01-10
US20130009231A1
Electricity

Method for efficiently fabricating memory cells with logic FETs and related structure

#18 | 2013-01-03
US20130001687A1
Electricity

Transistor with reduced channel length variation

#19 | 2012-11-29
US20120299187A1
Electricity

Aluminum Bond Pad With Trench Thinning for Fine Pitch Ultra-Thick Aluminum Products

#20 | 2012-11-22
US20120292708A1
Electricity

Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same

#21 | 2012-08-30
US20120217613A1
Electricity

Programmable fuse

#22 | 2012-02-16
US20120039108A1
Physics

One-time programmable memory cell

#23 | 2012-02-16
US20120039106A1
Physics

Programmable memory cell with shiftable threshold voltage transistor

#24 | 2011-09-01
US20110210384A1
Electricity

Scalable integrated MIM capacitor using gate metal

#25 | 2011-08-18
US20110198705A1
Electricity

Integrated resistor using gate metal for a resistive element

#26 | 2011-05-12
US20110108903A1
Electricity

Method for fabricating a flash memory cell utilizing a high-K metal gate process and related structure

#27 | 2011-04-21
US20110089490A1
Electricity

Method for fabricating a MOS transistor with reduced channel length variation and related structure

#28 | 2011-04-07
US20110079917A1
Electricity

Interposer structure with passive component and method for fabricating same

#29 | 2011-02-17
US20110037144A1
Electricity

Method for fabricating a decoupling composite capacitor in a wafer and related structure

#30 | 2011-02-10
US20110032742A1
Physics

One-time programmable memory cell with shiftable threshold voltage transistor

#31 | 2011-02-10
US20110031585A1
Electricity

Method for fabricating a MIM capacitor using gate metal for electrode and related structure

#32 | 2010-12-23
US20100320561A1
Electricity

Method for forming a one-time programmable metal fuse and related structure

#33 | 2010-11-11
US20100284210A1
Physics

One-time programmable memory cell

InventorID:

4085 ⎘