San Bruno, California
United States
31
2021-07-08
The entities that hold a legal rights for patent applications filed by inventor Hu Jun:
Jun Hu from San Bruno, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods of manufacture of termination for vertical trench shielded devices
#2 | 2021-02-11Termination for vertical trench shielded devices
#3 | 2021-01-21Dual-gate trench IGBT with buried floating P-type shield
#4 | 2019-10-31TOP STRUCTURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH IMPROVED INJECTION ENHANCEMENT
#5 | 2019-07-18Top structure of super junction MOSFETs and methods of fabrication
#6 | 2019-07-04Edge termination designs for semiconductor power devices
#7 | 2019-05-23Dual-gate trench IGBT with buried floating P-type shield
#8 | 2019-02-28Epitaxial structure of trench MOSFET devices
#9 | 2019-01-24SGT MOSFET with adjustable CRSS and CISS
#10 | 2017-11-23Edge termination designs for super junction device
#11 | 2017-09-21Dual-gate trench IGBT with buried floating P-type shield
#12 | 2017-06-08SGT MOSFET with adjustable CRSS and CISS
#13 | 2016-12-01High voltage field balance metal oxide field effect transistor (FBM)
#14 | 2016-11-17Dual-gate trench IGBT with buried floating P-type shield
#15 | 2016-09-15Dual trench-gate IGBT structure
#16 | 2016-07-07Injection control in semiconductor power devices
#17 | 2015-12-24High voltage field balance metal oxide field effect transistor (FBM)
#18 | 2015-12-10Charge reservoir IGBT top structure
#19 | 2015-12-03Injection control in semiconductor power devices
#20 | 2015-05-21Charge reservoir IGBT top structure
#21 | 2015-02-05Dual trench-gate IGBT structure
#22 | 2014-12-11Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage
#23 | 2014-10-30High voltage field balance metal oxide field effect transistor (FBM)
#24 | 2014-09-18Dual-gate trench IGBT with buried floating P-type shield
#25 | 2014-08-28High voltage fast recovery trench diode
#26 | 2014-05-15Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage
#27 | 2014-04-29High voltage fast recovery trench diode
#28 | 2014-01-30High voltage field balance metal oxide field effect transistor (FBM)
#29 | 2013-02-28Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
#30 | 2013-01-03Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage
#31 | 2012-08-09Cascode scheme for improved device switching behavior
4097 ⎘