Inventor profile of:

Haining S. Yang

City:

Wappingers Falls, New York

Country:

United States

Published Applications:

166

Last publication date:

2014-06-05

Top Assignees for applications by Haining S. Yang

The entities that hold a legal rights for patent applications filed by inventor Yang Haining S.:

Recent patent applications by Yang Haining S.

Haining S. Yang from Wappingers Falls, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-06-05
US20140151644A1
Electricity

HETEROJUNCTION TUNNELING FIELD EFFECT TRANSISTORS, AND METHODS FOR FABRICATING THE SAME

#2 | 2013-09-05
US20130230983A1
Electricity

Hybrid interconnect structure for performance improvement and reliability enhancement

#3 | 2013-09-05
US20130228925A1
Electricity

Hybrid interconnect structure for performance improvement and reliability enhancement

#4 | 2013-08-29
US20130221529A1
Electricity

Hybrid interconnect structure for performance improvement and reliability enhancement

#5 | 2012-09-20
US20120235236A1
Electricity

Structure and method of forming a transistor with asymmetric channel and source/drain regions

#6 | 2012-08-23
US20120214301A1
Electricity

Structure and method to form E-fuse with enhanced current crowding

#7 | 2012-08-02
US20120193679A1
Electricity

Heterojunction tunneling field effect transistors, and methods for fabricating the same

#8 | 2012-07-12
US20120178227A1
Electricity

Replacement gate CMOS

#9 | 2012-07-12
US20120175640A1
Electricity

Semiconductor devices having tensile and/or compressive stress and methods of manufacturing

#10 | 2012-05-31
US20120135591A1
Electricity

Semiconductor devices having tensile and/or compressive stress and methods of manufacturing

#11 | 2012-05-24
US20120126339A1
Electricity

Semiconductor transistors having reduced distances between gate electrode regions

#12 | 2011-11-17
US20110280094A1
Physics

Boost cell supply write assist

#13 | 2011-10-27
US20110260323A1
Electricity

Hybrid interconnect structure for performance improvement and reliability enhancement

#14 | 2011-07-28
US20110180853A1
Electricity

Carrier mobility enhanced channel devices and method of manufacture

#15 | 2011-03-24
US20110070739A1
Electricity

Double patterning process for integrated circuit device manufacturing

#16 | 2010-11-25
US20100295132A1
Electricity

Programmable PN anti-fuse

#17 | 2010-11-11
US20100283121A1
Electricity

Electrical fuses and resistors having sublithographic dimensions

#18 | 2010-10-07
US20100252881A1
Electricity

CMOS diodes with dual gate conductors, and methods for forming the same

#19 | 2010-09-23
US20100237460A9
Electricity

Methods and systems involving electrically programmable fuses

#20 | 2010-09-23
US20100237424A1
Electricity

Replacement gate CMOS

#21 | 2010-08-19
US20100207213A1
Electricity

Body contacts for FET in SOI SRAM array

#22 | 2010-08-12
US20100200934A1
Electricity

Field effect device including recessed and aligned germanium containing channel

#23 | 2010-07-29
US20100187636A1
Electricity

METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS FET AND DUAL LINER PROCESS

#24 | 2010-07-15
US20100178615A1
Physics

Method for reducing tip-to-tip spacing between lines

#25 | 2010-07-15
US20100176450A1
Electricity

Structure and method of forming a transistor with asymmetric channel and source/drain regions

#26 | 2010-06-17
US20100148259A1
Electricity

SOI substrates and SOI devices, and methods for forming the same

#27 | 2010-06-10
US20100143649A1
Chemistry; metallurgy

High aspect ratio electroplated metal feature and method

#28 | 2010-04-22
US20100096673A1
Electricity

Semiconductor device structure having enhanced performance FET device

#29 | 2010-02-18
US20100038705A1
Electricity

FIELD EFFECT DEVICE WITH GATE ELECTRODE EDGE ENHANCED GATE DIELECTRIC AND METHOD FOR FABRICATION

#30 | 2010-01-28
US20100019322A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

#31 | 2010-01-14
US20100005649A1
Electricity

Electrical fuse having sublithographic cavities thereupon

#32 | 2009-12-24
US20090315117A1
Electricity

CMOS devices having reduced threshold voltage variations and methods of manufacture thereof

#33 | 2009-12-17
US20090309184A1
Electricity

Structure and method to form e-fuse with enhanced current crowding

#34 | 2009-12-17
US20090309164A1
Electricity

Structure and method to integrate dual silicide with dual stress liner to improve CMOS performance

#35 | 2009-12-10
US20090302417A1
Electricity

Structure and method to form dual silicide e-fuse

#36 | 2009-12-10
US20090302412A1
Electricity

Carrier mobility enhanced channel devices and method of manufacture

#37 | 2009-11-19
US20090283829A1
Electricity

FINFET WITH A V-SHAPED CHANNEL

#38 | 2009-10-29
US20090267196A1
Electricity

High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching

#39 | 2009-10-15
US20090256211A1
Electricity

Metal gate compatible flash memory gate stack

#40 | 2009-10-15
US20090256173A1
Electricity

Complementary field effect transistors having embedded silicon source and drain regions

#41 | 2009-09-17
US20090230427A1
Electricity

Semiconductor devices having tensile and/or compressive stress and methods of manufacturing

#42 | 2009-09-03
US20090218695A1
Electricity

Low contact resistance metal contact

#43 | 2009-08-20
US20090206489A1
Electricity

Dual damascene metal interconnect structure having a self-aligned via

#44 | 2009-08-20
US20090206442A1
Electricity

Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress

#45 | 2009-08-13
US20090201743A1
Electricity

Multiwalled carbon nanotube memory device

#46 | 2009-07-09
US20090174010A1
Electricity

SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function

#47 | 2009-06-18
US20090152638A1
Electricity

Dual oxide stress liner

#48 | 2009-06-11
US20090148677A1
Chemistry; metallurgy

High aspect ratio electroplated metal feature and method

#49 | 2009-05-28
US20090134470A1
Electricity

High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same

#50 | 2009-05-07
US20090115020A1
Electricity

Electrical fuse and method of making

#51 | 2009-04-30
US20090108364A1
Electricity

Dual workfunction silicide diode

#52 | 2009-04-30
US20090108356A1
Electricity

Integration scheme for multiple metal gate work function structures

#53 | 2009-04-30
US20090108351A1
Electricity

FINFET MEMORY DEVICE WITH DUAL SEPARATE GATES AND METHOD OF OPERATION

#54 | 2009-04-16
US20090098689A1
Electricity

Electrical fuse and method of making

#55 | 2009-03-05
US20090057818A1
Electricity

Methods and systems involving electrically programmable fuses

#56 | 2009-02-12
US20090039512A1
Electricity

ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE

#57 | 2009-02-05
US20090032959A1
Electricity

Electrical fuses and resistors having sublithographic dimensions

#58 | 2009-02-05
US20090032886A1
Electricity

Semiconductor transistors having reduced distances between gate electrode regions

#59 | 2009-01-29
US20090029531A1
Electricity

Hybrid orientation substrate and method for fabrication thereof

#60 | 2009-01-29
US20090026574A1
Electricity

Electrical fuse having sublithographic cavities thereupon

#61 | 2009-01-29
US20090026543A1
Electricity

FinFET with sublithographic fin width

#62 | 2009-01-29
US20090026523A1
Electricity

Partially gated FINFET with gate dielectric on only one sidewall

#63 | 2009-01-27
US11968416
-

Multiwalled carbon nanotube memory device

#64 | 2009-01-22
US20090021338A1
Physics

Electrical fuse having a cavity thereupon

#65 | 2009-01-15
US20090014798A1
Electricity

FinFET SRAM with asymmetric gate and method of manufacture thereof

#66 | 2009-01-01
US20090001506A1
Electricity

DUAL STRESS LINER EFUSE

#67 | 2009-01-01
US20090001466A1
Electricity

Method of forming an SOI substrate contact

#68 | 2009-01-01
US20090001045A1
Performing operations; transporting

METHODS OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND FORMING POROUS DIELECTRIC

#69 | 2008-12-18
US20080311714A1
Electricity

Semiconductor structure and method of manufacture

#70 | 2008-12-18
US20080308900A1
Physics

ELECTRICAL FUSE WITH SUBLITHOGRAPHIC DIMENSION

#71 | 2008-11-27
US20080290413A1
Electricity

SOI MOSFET WITH A METAL SEMICONDUCTOR ALLOY GATE-TO-BODY BRIDGE

#72 | 2008-11-20
US20080283962A1
Electricity

Self-aligned and extended inter-well isolation structure

#73 | 2008-11-20
US20080283930A1
Electricity

EXTENDED DEPTH INTER-WELL ISOLATION STRUCTURE

#74 | 2008-11-20
US20080283824A1
Electricity

Method and structure for forming strained Si for CMOS devices

#75 | 2008-10-30
US20080268634A1
Electricity

DOPANT DIFFUSION BARRIER LAYER TO PREVENT OUT DIFFUSION

#76 | 2008-10-16
US20080251853A1
Electricity

STRUCTURE AND METHOD TO OPTIMIZE STRAIN IN CMOSFETs

#77 | 2008-10-09
US20080246093A1
Electricity

STRUCTURE AND METHOD OF MAKING A SEMICONDUCTOR INTEGRATED CIRCUIT TOLERANT OF MIS-ALIGNMENT OF A METAL CONTACT PATTERN

#78 | 2008-10-02
US20080239792A1
Electricity

Metal silicide alloy local interconnect

#79 | 2008-10-02
US20080237867A1
Electricity

Low contact resistance metal contact

#80 | 2008-10-02
US20080237786A1
Electricity

Non-planar fuse structure including angular bend

#81 | 2008-10-02
US20080237749A1
Electricity

CMOS gate conductor having cross-diffusion barrier

#82 | 2008-10-02
US20080237737A1
Electricity

Overlapped stressed liners for improved contacts

#83 | 2008-10-02
US20080237708A1
Electricity

Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts

#84 | 2008-09-25
US20080230906A1
Electricity

CONTACT STRUCTURE HAVING DIELECTRIC SPACER AND METHOD

#85 | 2008-09-25
US20080230848A1
Electricity

STRUCTURE HAVING DUAL SILICIDE REGION AND RELATED METHOD

#86 | 2008-09-18
US20080224213A1
Electricity

Process for making FinFET device with body contact and buried oxide junction isolation

#87 | 2008-09-11
US20080217696A1
Electricity

Method and structure for controlling stress in a transistor channel

#88 | 2008-09-11
US20080217665A1
Electricity

Semiconductor device structure having enhanced performance FET device

#89 | 2008-08-14
US20080191788A1
Electricity

SOI MOSFET DEVICE WITH ADJUSTABLE THRESHOLD VOLTAGE

#90 | 2008-08-07
US20080185657A1
Electricity

Method for dual stress liner

#91 | 2008-07-31
US20080182402A1
Electricity

Sub-lithographic interconnect patterning using self-assembling polymers

#92 | 2008-07-31
US20080179712A1
Electricity

Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost

#93 | 2008-07-31
US20080179678A1
Electricity

Two-sided semiconductor-on-insulator structures and methods of manufacturing the same

#94 | 2008-07-31
US20080179667A1
Electricity

Sub-lithographic gate length transistor using self-assembling polymers

#95 | 2008-07-24
US20080174017A1
Electricity

Hybrid interconnect structure for performance improvement and reliability enhancement

#96 | 2008-07-17
US20080171420A1
Electricity

Structure and method to form improved isolation in a semiconductor device

#97 | 2008-07-17
US20080169535A1
Electricity

SUB-LITHOGRAPHIC FACETING FOR MOSFET PERFORMANCE ENHANCEMENT

#98 | 2008-07-03
US20080157269A1
Electricity

Reversible electric fuse and antifuse structures for semiconductor devices

#99 | 2008-06-12
US20080135948A1
Electricity

Device patterned with sub-lithographic features with variable widths

#100 | 2008-06-05
US20080128797A1
Electricity

STRUCTURE AND METHOD FOR MULTIPLE HEIGHT FINFET DEVICES

InventorID:

409867 ⎘