Wappingers Falls, New York
United States
166
2014-06-05
The entities that hold a legal rights for patent applications filed by inventor Yang Haining S.:
Haining S. Yang from Wappingers Falls, US has applied for patents for these inventions. The list has both pending applications and granted patents:
HETEROJUNCTION TUNNELING FIELD EFFECT TRANSISTORS, AND METHODS FOR FABRICATING THE SAME
#2 | 2013-09-05Hybrid interconnect structure for performance improvement and reliability enhancement
#3 | 2013-09-05Hybrid interconnect structure for performance improvement and reliability enhancement
#4 | 2013-08-29Hybrid interconnect structure for performance improvement and reliability enhancement
#5 | 2012-09-20Structure and method of forming a transistor with asymmetric channel and source/drain regions
#6 | 2012-08-23Structure and method to form E-fuse with enhanced current crowding
#7 | 2012-08-02Heterojunction tunneling field effect transistors, and methods for fabricating the same
#8 | 2012-07-12Replacement gate CMOS
#9 | 2012-07-12Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
#10 | 2012-05-31Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
#11 | 2012-05-24Semiconductor transistors having reduced distances between gate electrode regions
#12 | 2011-11-17Boost cell supply write assist
#13 | 2011-10-27Hybrid interconnect structure for performance improvement and reliability enhancement
#14 | 2011-07-28Carrier mobility enhanced channel devices and method of manufacture
#15 | 2011-03-24Double patterning process for integrated circuit device manufacturing
#16 | 2010-11-25Programmable PN anti-fuse
#17 | 2010-11-11Electrical fuses and resistors having sublithographic dimensions
#18 | 2010-10-07CMOS diodes with dual gate conductors, and methods for forming the same
#19 | 2010-09-23Methods and systems involving electrically programmable fuses
#20 | 2010-09-23Replacement gate CMOS
#21 | 2010-08-19Body contacts for FET in SOI SRAM array
#22 | 2010-08-12Field effect device including recessed and aligned germanium containing channel
#23 | 2010-07-29METHOD TO INCREASE STRAIN ENHANCEMENT WITH SPACERLESS FET AND DUAL LINER PROCESS
#24 | 2010-07-15Method for reducing tip-to-tip spacing between lines
#25 | 2010-07-15Structure and method of forming a transistor with asymmetric channel and source/drain regions
#26 | 2010-06-17SOI substrates and SOI devices, and methods for forming the same
#27 | 2010-06-10High aspect ratio electroplated metal feature and method
#28 | 2010-04-22Semiconductor device structure having enhanced performance FET device
#29 | 2010-02-18FIELD EFFECT DEVICE WITH GATE ELECTRODE EDGE ENHANCED GATE DIELECTRIC AND METHOD FOR FABRICATION
#30 | 2010-01-28SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
#31 | 2010-01-14Electrical fuse having sublithographic cavities thereupon
#32 | 2009-12-24CMOS devices having reduced threshold voltage variations and methods of manufacture thereof
#33 | 2009-12-17Structure and method to form e-fuse with enhanced current crowding
#34 | 2009-12-17Structure and method to integrate dual silicide with dual stress liner to improve CMOS performance
#35 | 2009-12-10Structure and method to form dual silicide e-fuse
#36 | 2009-12-10Carrier mobility enhanced channel devices and method of manufacture
#37 | 2009-11-19FINFET WITH A V-SHAPED CHANNEL
#38 | 2009-10-29High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching
#39 | 2009-10-15Metal gate compatible flash memory gate stack
#40 | 2009-10-15Complementary field effect transistors having embedded silicon source and drain regions
#41 | 2009-09-17Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
#42 | 2009-09-03Low contact resistance metal contact
#43 | 2009-08-20Dual damascene metal interconnect structure having a self-aligned via
#44 | 2009-08-20Method and structure for relieving transistor performance degradation due to shallow trench isolation induced stress
#45 | 2009-08-13Multiwalled carbon nanotube memory device
#46 | 2009-07-09SRAM device structure including same band gap transistors having gate stacks with high-K dielectrics and same work function
#47 | 2009-06-18Dual oxide stress liner
#48 | 2009-06-11High aspect ratio electroplated metal feature and method
#49 | 2009-05-28High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same
#50 | 2009-05-07Electrical fuse and method of making
#51 | 2009-04-30Dual workfunction silicide diode
#52 | 2009-04-30Integration scheme for multiple metal gate work function structures
#53 | 2009-04-30FINFET MEMORY DEVICE WITH DUAL SEPARATE GATES AND METHOD OF OPERATION
#54 | 2009-04-16Electrical fuse and method of making
#55 | 2009-03-05Methods and systems involving electrically programmable fuses
#56 | 2009-02-12ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE
#57 | 2009-02-05Electrical fuses and resistors having sublithographic dimensions
#58 | 2009-02-05Semiconductor transistors having reduced distances between gate electrode regions
#59 | 2009-01-29Hybrid orientation substrate and method for fabrication thereof
#60 | 2009-01-29Electrical fuse having sublithographic cavities thereupon
#61 | 2009-01-29FinFET with sublithographic fin width
#62 | 2009-01-29Partially gated FINFET with gate dielectric on only one sidewall
#63 | 2009-01-27Multiwalled carbon nanotube memory device
#64 | 2009-01-22Electrical fuse having a cavity thereupon
#65 | 2009-01-15FinFET SRAM with asymmetric gate and method of manufacture thereof
#66 | 2009-01-01DUAL STRESS LINER EFUSE
#67 | 2009-01-01Method of forming an SOI substrate contact
#68 | 2009-01-01METHODS OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND FORMING POROUS DIELECTRIC
#69 | 2008-12-18Semiconductor structure and method of manufacture
#70 | 2008-12-18ELECTRICAL FUSE WITH SUBLITHOGRAPHIC DIMENSION
#71 | 2008-11-27SOI MOSFET WITH A METAL SEMICONDUCTOR ALLOY GATE-TO-BODY BRIDGE
#72 | 2008-11-20Self-aligned and extended inter-well isolation structure
#73 | 2008-11-20EXTENDED DEPTH INTER-WELL ISOLATION STRUCTURE
#74 | 2008-11-20Method and structure for forming strained Si for CMOS devices
#75 | 2008-10-30DOPANT DIFFUSION BARRIER LAYER TO PREVENT OUT DIFFUSION
#76 | 2008-10-16STRUCTURE AND METHOD TO OPTIMIZE STRAIN IN CMOSFETs
#77 | 2008-10-09STRUCTURE AND METHOD OF MAKING A SEMICONDUCTOR INTEGRATED CIRCUIT TOLERANT OF MIS-ALIGNMENT OF A METAL CONTACT PATTERN
#78 | 2008-10-02Metal silicide alloy local interconnect
#79 | 2008-10-02Low contact resistance metal contact
#80 | 2008-10-02Non-planar fuse structure including angular bend
#81 | 2008-10-02CMOS gate conductor having cross-diffusion barrier
#82 | 2008-10-02Overlapped stressed liners for improved contacts
#83 | 2008-10-02Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts
#84 | 2008-09-25CONTACT STRUCTURE HAVING DIELECTRIC SPACER AND METHOD
#85 | 2008-09-25STRUCTURE HAVING DUAL SILICIDE REGION AND RELATED METHOD
#86 | 2008-09-18Process for making FinFET device with body contact and buried oxide junction isolation
#87 | 2008-09-11Method and structure for controlling stress in a transistor channel
#88 | 2008-09-11Semiconductor device structure having enhanced performance FET device
#89 | 2008-08-14SOI MOSFET DEVICE WITH ADJUSTABLE THRESHOLD VOLTAGE
#90 | 2008-08-07Method for dual stress liner
#91 | 2008-07-31Sub-lithographic interconnect patterning using self-assembling polymers
#92 | 2008-07-31Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost
#93 | 2008-07-31Two-sided semiconductor-on-insulator structures and methods of manufacturing the same
#94 | 2008-07-31Sub-lithographic gate length transistor using self-assembling polymers
#95 | 2008-07-24Hybrid interconnect structure for performance improvement and reliability enhancement
#96 | 2008-07-17Structure and method to form improved isolation in a semiconductor device
#97 | 2008-07-17SUB-LITHOGRAPHIC FACETING FOR MOSFET PERFORMANCE ENHANCEMENT
#98 | 2008-07-03Reversible electric fuse and antifuse structures for semiconductor devices
#99 | 2008-06-12Device patterned with sub-lithographic features with variable widths
#100 | 2008-06-05STRUCTURE AND METHOD FOR MULTIPLE HEIGHT FINFET DEVICES
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