Inventor profile of:

Alexander A. Ned

City:

Wayne, New Jersey

Country:

United States

Published Applications:

14

Last publication date:

2008-09-11

Top Assignees for applications by Alexander A. Ned

The entities that hold a legal rights for patent applications filed by inventor Ned Alexander A.:

Recent patent applications by Ned Alexander A.

Alexander A. Ned from Wayne, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2008-09-11
US20080217728A1
Electricity

Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices

#2 | 2008-02-07
US20080028863A1
Physics

High temperature pressure sensing system

#3 | 2007-11-01
US20070254796A1
Chemistry; metallurgy

Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers

#4 | 2007-07-12
US20070157735A1
Physics

High accuracy, high temperature, redundant media protected differential transducers

#5 | 2007-05-24
US20070114624A1
Physics

Moisture resistant pressure sensors

#6 | 2007-05-03
US20070099392A1
Electricity

Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices

#7 | 2007-04-26
US20070089526A1
Physics

High accuracy, high temperature, redundant media protected differential transducers

#8 | 2007-03-29
US20070068267A1
Physics

High temperature pressure sensing system

#9 | 2007-02-22
US20070039391A1
Physics

Ultra high temperature hermetically protected wirebonded piezoresistive transducer

#10 | 2006-12-21
US20060283257A1
Physics

Moisture resistant differential pressure sensors

#11 | 2006-10-24
US11157615
-

Ultra high temperature hermetically protected wirebonded piezoresistive transducer

#12 | 2006-07-20
US20060157840A1
Physics

High temperature interconnects for high temperature transducers

#13 | 2006-06-06
US10016035
-

Combined absolute differential transducer

#14 | 2005-05-31
US10463890
-

High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane

InventorID:

4109156 ⎘