Inventor profile of:

Larry Alan Nesbit

City:

Williston, Vermont

Country:

United States

Published Applications:

20

Last publication date:

2008-09-18

Top Assignees for applications by Larry Alan Nesbit

The entities that hold a legal rights for patent applications filed by inventor Nesbit Larry Alan:

Recent patent applications by Nesbit Larry Alan

Larry Alan Nesbit from Williston, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2008-09-18
US20080227264A1
Electricity

Vertical nanotube semiconductor device structures and methods of forming the same

#2 | 2008-08-21
US20080197448A1
Electricity

SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2

#3 | 2008-07-03
US20080160312A1
Performing operations; transporting

Methods and structures for promoting stable synthesis of carbon nanotubes

#4 | 2008-02-21
US20080044954A1
Electricity

Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby

#5 | 2008-02-14
US20080040696A1
Physics

Design Structures Incorporating Shallow Trench Isolation Filled by Liquid Phase Deposition of SiO2

#6 | 2007-10-04
US20070228510A1
Electricity

Shallow trench isolation fill by liquid phase deposition of SiO

#7 | 2006-10-12
US20060226480A1
Electricity

Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom

#8 | 2006-07-27
US20060166432A1
Electricity

Process for oxide cap formation in semiconductor manufacturing

#9 | 2005-12-01
US20050266627A1
Electricity

Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

#10 | 2005-11-03
US20050242378A1
Electricity

Metal-oxide-semiconductor device structures with tailored dopant depth profiles

#11 | 2005-09-15
US20050202607A1
Electricity

Method of forming FinFET gates without long etches

#12 | 2005-09-15
US20050202322A1
Physics

Methods of forming alternating phase shift masks having improved phase-shift tolerance

#13 | 2005-08-18
US20050179029A1
Electricity

Vertical carbon nanotube field effect transistors and arrays

#14 | 2005-08-04
US20050167740A1
Electricity

Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

#15 | 2005-08-04
US20050167655A1
Electricity

Vertical nanotube semiconductor device structures and methods of forming the same

#16 | 2005-06-16
US20050130387A1
Electricity

Shallow trench isolation fill by liquid phase deposition of SiO2

#17 | 2005-06-16
US20050130341A1
Electricity

Selective synthesis of semiconducting carbon nanotubes

#18 | 2005-06-16
US20050129948A1
Performing operations; transporting

Methods and structures for promoting stable synthesis of carbon nanotubes

#19 | 2005-05-12
US20050098804A1
Electricity

Methods for fabricating a metal-oxide-semiconductor device structure

#20 | 2005-05-10
US10454852
-

Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby

InventorID:

4119138 ⎘