Inventor profile of:

Igor Arsovski

City:

Williston, Vermont

Country:

United States

Published Applications:

116

Last publication date:

2026-01-22

Top Assignees for applications by Igor Arsovski

The entities that hold a legal rights for patent applications filed by inventor Arsovski Igor:

Recent patent applications by Arsovski Igor

Igor Arsovski from Williston, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-22
US20260025165A1
Electricity

COMMUNICATION SCHEDULING BASED ON CROSSTALK DATA

#2 | 2024-09-05
US20240296069A1
Physics

PROACTIVE THERMAL MANAGEMENT OF A DETERMINISTIC PROCESSOR TO IMPROVE LATENCY, THROUGHPUT, AND RELIABILITY

#3 | 2024-07-25
US20240248524A1
Physics

Power Management of a Power Regulator in a Processor During High Current Events

#4 | 2024-05-30
US20240176406A1
Physics

Preemptive Processor Power Supply Regulator Feedback Modulation to Mitigate Voltage Overshoot and Undershoot

#5 | 2023-10-26
US20230343768A1
Electricity

Optical Communication for Memory Disaggregation in High Performance Computing

#6 | 2021-09-16
US20210287725A1
Physics

Multi-sense amplifier based access to a single port of a memory cell

#7 | 2021-04-22
US20210118477A1
Physics

Multiple sense amplifier and data path-based pseudo dual port SRAM

#8 | 2021-04-22
US20210116498A1
Physics

Customer-transparent logic redundancy for improved yield

#9 | 2021-03-18
US20210082532A1
Physics

Sensing circuits for charge trap transistors

#10 | 2021-03-04
US20210065784A1
Physics

Multi-port high performance memory

#11 | 2021-02-04
US20210034567A1
Physics

Multi-port memory architecture for a systolic array

#12 | 2020-12-03
US20200381355A1
Electricity

Hermetic barrier for semiconductor device

#13 | 2020-10-22
US20200334014A1
Physics

Parallel-prefix adder and method

#14 | 2020-10-08
US20200321070A1
Physics

Memory built-in self test error correcting code (MBIST ECC) for low voltage memories

#15 | 2020-10-06
US16421730
Physics

Activity-aware supply voltage and bias voltage compensation

#16 | 2020-07-30
US20200243130A1
Physics

High-density high-bandwidth static random access memory (SRAM) with phase shifted sequential read

#17 | 2020-05-28
US20200167127A1
Physics

Parallel-prefix adder and method

#18 | 2020-05-14
US20200152270A1
Physics

Ternary content addressable memory

#19 | 2020-03-05
US20200072902A1
Physics

Customer-transparent logic redundancy for improved yield

#20 | 2020-01-16
US20200020388A1
Physics

Sequential read mode static random access memory (SRAM)

#21 | 2019-11-14
US20190348137A1
Physics

Zero test time memory using background built-in self-test

#22 | 2019-09-26
US20190295676A1
Physics

Dynamic power analysis with per-memory instance activity customization

#23 | 2019-05-16
US20190147952A1
Physics

Ternary content addressable memory

#24 | 2019-02-28
US20190066786A1
Physics

Sense-line muxing scheme

#25 | 2018-10-04
US20180286491A1
Physics

Zero test time memory using background built-in self-test

#26 | 2018-05-10
US20180130521A1
Physics

Bending circuit for static random access memory (SRAM) self-timer

#27 | 2018-04-19
US20180108642A1
Electricity

INTERPOSER HEATER FOR HIGH BANDWIDTH MEMORY APPLICATIONS

#28 | 2018-03-13
US15340579
Physics

Ternary content addressable memory (TCAM) for multi bit miss detect circuit

#29 | 2018-02-13
US15464397
Electricity

Transmission system having duplicate transmission systems for individualized precharge and output timing

#30 | 2017-12-28
US20170370990A1
Physics

Customer-transparent logic redundancy for improved yield

#31 | 2017-12-21
US20170365341A1
Physics

Algorithmic N search/M write ternary content addressable memory (TCAM)

#32 | 2017-12-07
US20170352407A1
Physics

Self pre-charging memory circuits

#33 | 2017-11-02
US20170315738A1
Physics

Double bandwidth algorithmic memory array

#34 | 2017-10-05
US20170287756A1
Electricity

Timing/power risk optimized selective voltage binning using non-linear voltage slope

#35 | 2017-09-28
US20170276726A1
Physics

Pre-test power-optimized bin reassignment following selective voltage binning

#36 | 2017-08-03
US20170220727A1
Physics

Application specific integrated circuit (ASIC) test screens and selection of such screens

#37 | 2017-07-20
US20170208544A1
Electricity

Environmentally aware mobile computing devices

#38 | 2017-07-13
US20170200500A1
Physics

Content-addressable memory having multiple reference matchlines to reduce latency

#39 | 2017-02-28
US15164325
Physics

Matchline precharge architecture for self-reference matchline sensing

#40 | 2017-02-09
US20170040059A1
Physics

Ternary content addressable memory

#41 | 2016-12-15
US20160365146A1
Physics

TCAM structures with reduced power supply noise

#42 | 2016-12-15
US20160364516A1
Physics

Composite views for IP blocks in ASIC designs

#43 | 2016-10-27
US20160313394A1
Physics

Pre-test power-optimized bin reassignment following selective voltage binning

#44 | 2016-06-16
US20160172038A1
Physics

Converting an XY TCAM to a value TCAM

#45 | 2016-06-09
US20160164497A1
Electricity

Minimization of bias temperature instability (BTI) degradation in circuits

#46 | 2016-05-19
US20160140243A1
Physics

Scoped search engine

#47 | 2016-05-12
US20160131706A1
Physics

Customer-transparent logic redundancy for improved yield

#48 | 2016-03-01
US14539527
Physics

Customer-transparent logic redundancy for improved yield

#49 | 2016-02-02
US14577113
Physics

Bias temperature instability state detection and correction

#50 | 2015-11-19
US20150332767A1
Physics

High density search engine

#51 | 2015-09-10
US20150254553A1
Physics

Learning artificial neural network using ternary content addressable memory (TCAM)

#52 | 2015-08-27
US20150242560A1
Physics

Limiting skew between different device types to meet performance requirements of an integrated circuit

#53 | 2015-08-13
US20150228357A1
Physics

Stress balancing of circuits

#54 | 2015-07-16
US20150200011A1
Physics

Converting an XY TCAM to a value TCAM

#55 | 2015-07-09
US20150194194A1
Physics

Single ended sensing circuits for signal lines

#56 | 2015-06-25
US20150179262A1
Physics

Partial update in a ternary content addressable memory

#57 | 2015-06-25
US20150179261A1
Physics

Partial update in a ternary content addressable memory

#58 | 2015-05-14
US20150130510A1
Electricity

Leakage reduction in output driver circuits

#59 | 2015-02-26
US20150055389A1
Physics

Self-timed, single-ended sense amplifier

#60 | 2015-01-22
US20150025857A1
Physics

STATISTICAL POWER ESTIMATION

#61 | 2014-11-06
US20140328103A1
Physics

Implementing computational memory from content-addressable memory

#62 | 2014-07-17
US20140201697A1
Physics

Determining overall optimal yield point for a semiconductor wafer

#63 | 2014-07-17
US20140201579A1
Physics

Methods and circuits for disrupting integrated circuit function

#64 | 2014-07-10
US20140192579A1
Physics

Two phase search content addressable memory with power-gated main-search

#65 | 2014-04-24
US20140112045A1
Physics

Memory system incorporating a circuit to generate a delay signal and an associated method of operating a memory system

#66 | 2013-12-05
US20130326111A1
Physics

Content addressable memory early-predict late-correct single ended sensing

#67 | 2013-11-21
US20130307580A1
Electricity

Majority dominant power scheme for repeated structures and structures thereof

#68 | 2013-09-12
US20130234754A1
Electricity

Majority dominant power scheme for repeated structures and structures thereof

#69 | 2013-08-29
US20130223161A1
Physics

Vdiff max limiter in SRAMs for improved yield and power

#70 | 2012-06-07
US20120140551A1
Physics

Static random access memory (SRAM) write assist circuit with leakage suppression and level control

#71 | 2012-05-31
US20120134221A1
Physics

Word-line level shift circuit

#72 | 2012-03-29
US20120075919A1
Physics

Methods and systems for adjusting wordline up-level voltage to improve production yield relative to SRAM-cell stability

#73 | 2012-03-29
US20120075918A1
Physics

SRAM having wordline up-level voltage adjustable to assist bitcell stability and design structure for same

#74 | 2012-03-01
US20120049947A1
Physics

Method and device for measuring integrated circuit power supply noise and calibration of power supply noise analysis models

#75 | 2011-04-28
US20110096582A1
Physics

Content addressable memory with concurrent read and search/compare operations at the same memory cell

#76 | 2011-04-21
US20110090750A1
Physics

SRAM delay circuit that tracks bitcell characteristics

#77 | 2011-04-14
US20110088005A1
Physics

Method and apparatus for configuring a content-addressable memory (CAM) design as binary CAM or ternary CAM

#78 | 2011-04-14
US20110085390A1
Physics

Word-line level shift circuit

#79 | 2010-12-16
US20100315894A1
Physics

Method for low power sensing in a multi-port SRAM using pre-discharged bit lines

#80 | 2010-12-09
US20100309740A1
Physics

Low power, single-ended sensing in a multi-port SRAM using pre-discharged bit lines

#81 | 2010-09-09
US20100228861A1
Physics

Environmental and computing cost reduction with improved reliability in workload assignment to distributed computing nodes

#82 | 2010-08-12
US20100201377A1
Physics

Critical path redundant logic for mitigation of hardware across chip variation

#83 | 2010-02-04
US20100031067A1
Physics

Adaptive noise suppression using a noise look-up table

#84 | 2009-12-31
US20090327620A1
Physics

Circuit structure and method for digital integrated circuit performance screening

#85 | 2009-12-10
US20090303821A1
Physics

Apparatus and method for low power, single-ended sensing in a multi-port SRAM using pre-discharged bit lines

#86 | 2009-12-10
US20090303820A1
Physics

Apparatus and method for low power sensing in a multi-port SRAM using pre-discharged bit lines

#87 | 2009-06-04
US20090141566A1
Physics

Structure for implementing memory array device with built in computation capability

#88 | 2009-06-04
US20090141537A1
Physics

Apparatus and method for implementing memory array device with built in computational capability

#89 | 2009-06-04
US20090141530A1
Physics

STRUCTURE FOR IMPLEMENTING ENHANCED CONTENT ADDRESSABLE MEMORY PERFORMANCE CAPABILITY

#90 | 2009-06-04
US20090141529A1
Physics

Design structure for implementing matrix-based search capability in content addressable memory devices

#91 | 2009-06-04
US20090141528A1
Physics

Content addressable memory with concurrent two-dimensional search capability in both row and column directions

#92 | 2009-06-04
US20090141527A1
Physics

Apparatus and method for implementing matrix-based search capability in content addressable memory devices

#93 | 2009-04-30
US20090108869A1
Electricity

Design structure for a flexible multimode logic element for use in a configurable mixed-logic signal distribution path

#94 | 2009-04-23
US20090106724A1
Physics

Transition balancing for noise reduction/Di/Dt reduction during design, synthesis, and physical design

#95 | 2009-04-23
US20090102529A1
Electricity

SHIFTING INACTIVE CLOCK EDGE FOR NOISE REDUCTION

#96 | 2009-04-16
US20090099828A1
Physics

Device Threshold Calibration Through State Dependent Burnin

#97 | 2009-01-22
US20090024972A1
Physics

Design structures of powering on integrated circuit

#98 | 2009-01-22
US20090022203A1
Physics

Method and systems of powering on integrated circuit

#99 | 2009-01-22
US20090021085A1
Physics

Design structures, method and systems of powering on integrated circuit

#100 | 2008-10-16
US20080253042A1
Physics

E-FUSE AND METHOD

InventorID:

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