Boise, Idaho
United States
15
2008-05-27
The entities that hold a legal rights for patent applications filed by inventor Yang Sam:
Sam Yang from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Low leakage MIM capacitor
#2 | 2008-05-06Low leakage MIM capacitor
#3 | 2008-03-13Low leakage MIM capacitor
#4 | 2008-03-06LOW LEAKAGE MIM CAPACITOR
#5 | 2008-03-06Low leakage MIM capacitor
#6 | 2007-08-07Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
#7 | 2007-05-08Technique for high efficiency metalorganic chemical vapor deposition
#8 | 2007-03-20Capacitor with high dielectric constant materials and method of making
#9 | 2006-07-27Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layer
#10 | 2006-05-30Planarization of metal container structures
#11 | 2006-04-13Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
#12 | 2006-03-21Metal oxynitride capacitor barrier layer
#13 | 2006-02-21Metal oxynitride capacitor barrier layer
#14 | 2005-07-26Technique for high efficiency metalorganic chemical vapor deposition
#15 | 2005-04-07Method for forming a ruthenium metal layer
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