Le Versoud
France
15
2017-09-07
The entities that hold a legal rights for patent applications filed by inventor Caubet Pierre:
Pierre Caubet from Le Versoud, FR has applied for patents for these inventions. The list has both pending applications and granted patents:
Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
#2 | 2017-06-22Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
#3 | 2015-07-16Transistor having a gate comprising a titanium nitride layer and method for depositing this layer
#4 | 2015-04-30Optoelectronic device, in particular memory device
#5 | 2014-10-30Method for producing a metal-gate MOS transistor, in particular a PMOS transistor, and corresponding integrated circuit
#6 | 2014-04-10Method for depositing a low-diffusion TiAlN layer and insulated gate comprising such a layer
#7 | 2013-01-03Transistors having a gate comprising a titanium nitride layer
#8 | 2010-06-24Implementation of a metal barrier in an integrated electronic circuit
#9 | 2010-06-03Production of a self-aligned CuSiN barrier
#10 | 2010-05-06Integrated electrooptic system
#11 | 2009-01-08Integrated electrooptic system
#12 | 2008-11-27Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
#13 | 2008-04-17Implementation of a metal barrier in an integrated electronic circuit
#14 | 2007-02-15Production of a self-aligned CuSiN barrier
#15 | 2006-03-23Process for forming integrated circuit comprising copper lines
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