Dresden
Germany
26
2017-11-02
The entities that hold a legal rights for patent applications filed by inventor Hempel Klaus:
Klaus Hempel from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Short-channel NFET device
#2 | 2016-09-29Short-channel nFET device
#3 | 2016-06-16Integrated circuits and methods of forming the same with effective dummy gate cap removal
#4 | 2013-11-14REPLACEMENT GATE ELECTRODE FILL AT REDUCED TEMPERATURES
#5 | 2013-10-17Method for making high-K metal gate electrode structures by separate removal of placeholder materials
#6 | 2013-08-22Dry etch polysilicon removal for replacement gates
#7 | 2013-07-04High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology
#8 | 2013-05-02Methods for fabricating integrated circuits with controlled P-channel threshold voltage
#9 | 2013-01-17Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer
#10 | 2012-12-20High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology
#11 | 2012-12-13Metal gate stack formation for replacement gate technology
#12 | 2012-11-08Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers
#13 | 2012-10-18High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
#14 | 2012-09-20REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL
#15 | 2011-11-03Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach
#16 | 2011-06-02High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning
#17 | 2011-06-02INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER
#18 | 2011-05-05HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS IN TRANSISTORS OF DIFFERENT CONDUCTIVITY TYPE
#19 | 2011-03-31Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material
#20 | 2010-12-30Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers
#21 | 2010-12-02Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
#22 | 2010-09-30Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material
#23 | 2010-09-02Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition
#24 | 2008-01-03Drain/source extension structure of a field effect transistor with reduced boron diffusion
#25 | 2007-07-05Trench isolation structure having different stress
#26 | 2007-07-05Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same
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