Robert Binder

Structures for a ferroelectric field-effect transistor and related methods

SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTION AND METHOD FOR THE FORMATION THEREOF

Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device

Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum

Methods for fabricating integrated circuits with fluorine passivation

Methods for fabricating integrated circuits with narrow, metal filled openings

Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer

Metal gate stack formation for replacement gate technology

REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL

Semiconductor Device Comprising Contact Elements and Metal Silicide Regions Formed in a Common Process Sequence

Semiconductor device formed by a replacement gate approach based on an early work function metal

INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER

Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning

Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer

Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition

Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum