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Inventor profile of:

Sangwoo Lim

City:

Austin, Texas

Country:

United States

Published Applications:

7

Last publication date:

2008-04-17

Top Assignees for applications by Sangwoo Lim

The entities that hold a legal rights for patent applications filed by inventor Lim Sangwoo:

  • FREESCALE SEMICONDUCTOR, INC 6 Austin, TX United States

Recent patent applications by Lim Sangwoo

Sangwoo Lim from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2008-04-17
US20080087954A1
Electricity

Semiconductor device having nitridated oxide layer and method therefor

#2 | 2006-10-05
US20060223266A1
Electricity

Method of forming an electronic device

#3 | 2006-08-31
US20060194423A1
Electricity

Method of making a nitrided gate dielectric

#4 | 2006-07-27
US20060166493A1
Electricity

Semiconductor device having nitridated oxide layer and method therefor

#5 | 2006-04-20
US20060084220A1
Electricity

Differentially nitrided gate dielectrics in CMOS fabrication process

#6 | 2006-04-13
US20060079047A1
Electricity

Integration of multiple gate dielectrics by surface protection

#7 | 2005-05-05
US20050093063A1
Electricity

Method for forming multiple gate oxide thickness utilizing ashing and cleaning

InventorID:

4155567 ⎘

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