Bloomington, Minnesota
United States
46
2013-12-12
The entities that hold a legal rights for patent applications filed by inventor Tian Wei:
Wei Tian from Bloomington, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Programmable metallization memory cell with layered solid electrolyte structure
#2 | 2013-01-03Magnetic tunnel junction with electronically reflective insulative spacer
#3 | 2012-11-29NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
#4 | 2012-11-01Non-volatile resistive sense memory with improved switching
#5 | 2012-10-11Magnetic tunnel junction with compensation element
#6 | 2012-09-27Magnetic stack with oxide to reduce switching current
#7 | 2012-08-09Schottky diode switch and memory units containing the same
#8 | 2012-06-21Tunneling transistors
#9 | 2012-06-14Schottky diode switch and memory units containing the same
#10 | 2012-06-07Programmable metallization memory cell with planarized silver electrode
#11 | 2012-06-07Programmable metallization memory cell with planarized silver electrode
#12 | 2012-05-17Memory cell with phonon-blocking insulating layer
#13 | 2012-01-26Magnetic stack with oxide to reduce switching current
#14 | 2011-12-08Nano-dimensional non-volatile memory cells
#15 | 2011-12-08Magnetic tunnel junction with compensation element
#16 | 2011-08-11Non-volatile memory cell with precessional switching
#17 | 2011-08-04Non-volatile memory cell with non-ohmic selection layer
#18 | 2011-05-26Anti-parallel diode structure and method of fabrication
#19 | 2011-03-03Magnetic tunnel junction with electronically reflective insulative spacer
#20 | 2011-01-27Magnetic tunnel junction with compensation element
#21 | 2011-01-13Non-volatile memory cell with non-ohmic selection layer
#22 | 2011-01-13Anti-parallel diode structure and method of fabrication
#23 | 2011-01-13Non-volatile memory cell stack with dual resistive elements
#24 | 2011-01-13Non-volatile memory with active ionic interface region
#25 | 2011-01-13Schottky diode switch and memory units containing the same
#26 | 2011-01-13Non-volatile resistive sense memory with praseodymium calcium manganese oxide
#27 | 2011-01-06PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT
#28 | 2010-12-30Methods of forming layers of alpha-tantalum
#29 | 2010-10-07Resistive Sense Memory with Complementary Programmable Recording Layers
#30 | 2010-08-05Non-volatile memory cell with precessional switching
#31 | 2010-08-05Programmable metallization memory cell with layered solid electrolyte structure
#32 | 2010-08-05Programmable metallization memory cell with planarized silver electrode
#33 | 2010-06-10NON VOLATILE MEMORY CELLS INCLUDING A COMPOSITE SOLID ELECTROLYTE LAYER
#34 | 2010-05-27Non volatile memory including stabilizing structures
#35 | 2010-05-20Non-volatile memory cells including small volume electrical contact regions
#36 | 2010-05-20Asymmetric barrier diode
#37 | 2010-05-13Memory cells including nanoporous layers containing conductive material
#38 | 2010-05-06Non-volatile memory cell with programmable unipolar switching element
#39 | 2010-05-06Programmable metallization cell switch and memory units containing the same
#40 | 2010-05-06NON-VOLATILE MEMORY CELL FORMATION
#41 | 2010-04-29FERROELECTRIC MEMORY WITH MAGNETOELECTRIC ELEMENT
#42 | 2010-04-15Magnetic stack with oxide to reduce switching current
#43 | 2010-04-01STRAM with electronically reflective insulative spacer
#44 | 2010-04-01STRAM with compensation element
#45 | 2009-12-24Ferroelectric memory using multiferroics
#46 | 2009-11-19Band engineered high-K tunnel oxides for non-volatile memory
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