Chanhassen, Minnesota
United States
72
2026-05-14
The entities that hold a legal rights for patent applications filed by inventor Wang Xiaobin:
Xiaobin Wang from Chanhassen, US has applied for patents for these inventions. The list has both pending applications and granted patents:
AIR FILTRATION MONITORING SYSTEM WITH LEARNING FEATURES
#2 | 2022-11-10FLUID AERATION DETECTION SYSTEMS AND METHODS
#3 | 2022-09-15AIR FILTRATION MONITORING SYSTEM WITH LEARNING FEATURES
#4 | 2015-12-31Data updating in non-volatile memory
#5 | 2015-06-18Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling
#6 | 2014-01-23Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit
#7 | 2014-01-09Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling
#8 | 2013-12-12Method of switching out-of-plane magnetic tunnel junction cells
#9 | 2013-11-07Exchange Coupled Magnetic Elements
#10 | 2013-11-07Magnetic memory element with multi-domain storage layer
#11 | 2013-10-31Heater assembly and method of heating
#12 | 2013-01-03Magnetic tunnel junction with electronically reflective insulative spacer
#13 | 2012-11-29NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
#14 | 2012-10-11Magnetic tunnel junction with compensation element
#15 | 2012-10-04Exchange coupled magnetic elements
#16 | 2012-10-04Magnetic field assisted stram cells
#17 | 2012-10-04Magnetic tunnel junction with free layer having exchange coupled magnetic elements
#18 | 2012-09-06Diode assisted switching spin-transfer torque memory unit
#19 | 2012-06-14Predictive thermal preconditioning and timing control for non-volatile memory cells
#20 | 2012-05-17Method of switching out-of-plane magnetic tunnel junction cells
#21 | 2012-05-03Magnetic memory element with multi-domain storage layer
#22 | 2012-04-12Asymmetric write current compensation
#23 | 2012-02-02Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling
#24 | 2012-01-19Magnetic tunnel junction and memristor apparatus
#25 | 2011-12-08Magnetic tunnel junction with compensation element
#26 | 2011-08-11Non-volatile memory cell with precessional switching
#27 | 2011-08-11Diode assisted switching spin-transfer torque memory unit
#28 | 2011-06-09Asymmetric write current compensation
#29 | 2011-06-09Variable write and read methods for resistive random access memory
#30 | 2011-06-02Predictive thermal preconditioning and timing control for non-volatile memory cells
#31 | 2011-05-19Magnetic tunnel junction and memristor apparatus
#32 | 2011-03-31Perpendicular magnetic recording media with magnetic anisotropy gradient and local exchange coupling
#33 | 2011-03-31Memory cell with enhanced read and write sense margins
#34 | 2011-03-10Memory cell with proportional current self-reference sensing
#35 | 2011-03-03Magnetic tunnel junction with electronically reflective insulative spacer
#36 | 2011-02-03Spin-transfer torque memory self-reference read and write assist methods
#37 | 2011-01-27Stuck-at defect condition repair for a non-volatile memory cell
#38 | 2011-01-27Magnetic tunnel junction with compensation element
#39 | 2010-12-23Memory self-reference read and write assist methods
#40 | 2010-12-23Multi-bit STRAM memory cells
#41 | 2010-12-16Diode assisted switching spin-transfer torque memory unit
#42 | 2010-09-30Predictive thermal preconditioning and timing control for non-volatile memory cells
#43 | 2010-09-23Stuck-at defect condition repair for a non-volatile memory cell
#44 | 2010-09-23Variable write and read methods for resistive random access memory
#45 | 2010-08-19Single line MRAM
#46 | 2010-08-05Non-volatile memory cell with precessional switching
#47 | 2010-07-08Magnetic Precession Based True Random Number Generator
#48 | 2010-05-27Non volatile memory including stabilizing structures
#49 | 2010-05-27NON VOLATILE MEMORY HAVING INCREASED SENSING MARGIN
#50 | 2010-05-06Memory cell with proportional current self-reference sensing
#51 | 2010-05-06Write method with voltage line tuning
#52 | 2010-05-06Spatial correlation of reference cells in resistive memory array
#53 | 2010-05-06Tunable random bit generator with magnetic tunnel junction
#54 | 2010-05-06Magnetic tunnel junction and memristor apparatus
#55 | 2010-04-29Spin-transfer torque memory self-reference read and write assist methods
#56 | 2010-04-29Spin-transfer torque memory self-reference read and write assist methods
#57 | 2010-04-15Data updating in non-volatile memory
#58 | 2010-04-15Voltage reference generation with selectable dummy regions
#59 | 2010-04-15Domain wall movement on magnetic strip tracks
#60 | 2010-04-08Enhancing read and write sense margins in a resistive sense element
#61 | 2010-04-08Asymmetric write current compensation
#62 | 2010-04-01STRAM with electronically reflective insulative spacer
#63 | 2010-04-01STRAM with compensation element
#64 | 2010-03-25Magnetic shift register as counter and data storage device
#65 | 2010-03-18Variable write and read methods for resistive random access memory
#66 | 2010-03-04STRAM CELLS WITH AMPERE FIELD ASSISTED SWITCHING
#67 | 2010-02-11Oscillating current assisted spin torque magnetic memory
#68 | 2010-02-11Magnetic field assisted STRAM cells
#69 | 2010-02-11Multi-bit STRAM memory cells
#70 | 2010-01-21Diode assisted switching spin-transfer torque memory unit
#71 | 2009-12-24Magnetic tracks with domain wall storage anchors
#72 | 2007-03-29Perpendicular magnetic recording media with magnetic anisotropy/coercivity gradient and local exchange coupling
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