Inventor profile of:

Wei-Ren Chen

City:

Pingtung County

Country:

Taiwan

Published Applications:

26

Last publication date:

2018-03-01

Top Assignees for applications by Wei-Ren Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Wei-Ren:

Recent patent applications by Chen Wei-Ren

Wei-Ren Chen from Pingtung County, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-03-01
US20180061647A1
Electricity

Method of fabricating electrically erasable programmable non-volatile memory cell structure

#2 | 2018-01-18
US20180019252A1
Electricity

Nonvolatile memory having a shallow junction diffusion region

#3 | 2017-07-20
US20170207230A1
Electricity

Single-poly nonvolatile memory cell structure having an erase device

#4 | 2017-07-20
US20170207228A1
Electricity

Nonvolatile memory structure

#5 | 2017-07-20
US20170206975A1
Physics

Memory cell with low reading voltages

#6 | 2017-04-20
US20170110195A1
Physics

Non-volatile memory cell and method of operating the same

#7 | 2016-12-29
US20160379688A1
Physics

Array structure of single-ploy nonvolatile memory

#8 | 2016-12-29
US20160379687A1
Physics

Array structure of single-ploy nonvolatile memory

#9 | 2016-09-08
US20160260727A1
Electricity

Nonvolatile memory cell structure with assistant gate and memory array thereof

#10 | 2016-09-01
US20160254032A1
Physics

Array structure of single-ploy nonvolatile memory

#11 | 2016-07-07
US20160197089A1
Electricity

Electrically erasable programmable non-volatile memory cell structure

#12 | 2016-05-05
US20160123775A1
Physics

Integrated capacitance sensing module and associated system

#13 | 2015-10-08
US20150287732A1
Electricity

Nonvolatile memory cell structure with assistant gate

#14 | 2015-10-08
US20150287438A1
Physics

Array structure of single-ploy nonvolatile memory

#15 | 2015-04-02
US20150091074A1
Electricity

Nonvolatile memory structure

#16 | 2014-12-11
US20140361358A1
Electricity

Nonvolatile memory structure

#17 | 2014-08-28
US20140242763A1
Electricity

METHOD FOR FABRICATING NONVOLATILE MEMORY STRUCTURE

#18 | 2014-07-03
US20140183612A1
Electricity

Nonvolatile memory structure and fabrication method thereof

#19 | 2013-11-14
US20130302977A1
Electricity

Method of fabricating erasable programmable single-poly nonvolatile memory

#20 | 2013-09-26
US20130248973A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#21 | 2013-09-26
US20130248972A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#22 | 2013-09-19
US20130242663A1
Physics

Programming inhibit method of nonvolatile memory apparatus for reducing leakage current

#23 | 2013-09-12
US20130237048A1
Electricity

Method of fabricating erasable programmable single-poly nonvolatile memory

#24 | 2013-09-12
US20130234228A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#25 | 2013-09-12
US20130234227A1
Electricity

Erasable programmable single-ploy nonvolatile memory

#26 | 2012-09-20
US20120236646A1
Physics

Logic-based multiple time programming memory cell compatible with generic CMOS processes

InventorID:

429889 ⎘