Zebulon, North Carolina
United States
34
2017-03-16
The entities that hold a legal rights for patent applications filed by inventor Hagleitner Helmut:
Helmut Hagleitner from Zebulon, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
#2 | 2017-01-12Method of forming vias in silicon carbide and resulting devices and circuits
#3 | 2016-04-21Semiconductor device with improved field plate
#4 | 2016-04-21Semiconductor device with improved field plate
#5 | 2015-12-17Gate contact for a semiconductor device and methods of fabrication thereof
#6 | 2015-05-21Wafer-level die attach metallization
#7 | 2014-09-18Encapsulation of advanced devices using novel PECVD and ALD schemes
#8 | 2014-09-18Wafer-level die attach metallization
#9 | 2014-09-18Gate contact for a semiconductor device and methods of fabrication thereof
#10 | 2014-06-26Dielectric solder barrier for semiconductor devices
#11 | 2014-05-08Ni-rich Schottky contact
#12 | 2014-04-17Using stress reduction barrier sub-layers in a semiconductor die
#13 | 2014-04-10Hydrogen mitigation schemes in the passivation of advanced devices
#14 | 2013-10-03Polymer via plugs with high thermal integrity
#15 | 2013-09-12Schottky contact
#16 | 2012-07-12Ohmic contact to semiconductor device
#17 | 2012-06-07Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features
#18 | 2012-05-10Contact pad
#19 | 2011-11-17Semiconductor devices having gates including oxidized nickel
#20 | 2011-11-03Semiconductor devices having improved adhesion and methods of fabricating the same
#21 | 2011-09-22Multilayer diffusion barriers for wide bandgap Schottky barrier devices
#22 | 2011-08-11Methods of forming contact structures including alternating metal and silicon layers and related devices
#23 | 2011-07-07Method of forming vias in silicon carbide and resulting devices and circuits
#24 | 2011-05-12Method of forming vias in silicon carbide and resulting devices and circuits
#25 | 2009-08-27Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
#26 | 2009-04-23Method of forming vias in silicon carbide and resulting devices and circuits
#27 | 2008-08-21Diode having reduced on-resistance and associated method of manufacture
#28 | 2008-05-22Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#29 | 2008-02-21DIFFUSION BARRIER FOR LIGHT EMITTING DIODES
#30 | 2007-01-04Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
#31 | 2006-03-30Method of forming vias in silicon carbide and resulting devices and circuits
#32 | 2006-02-14Methods of fabricating high voltage, high temperature capacitor and interconnection structures
#33 | 2006-01-12Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#34 | 2005-12-06High voltage, high temperature capacitor and interconnection structures
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