Inventor profile of:

Kozo KATAYAMA

City:

Tokyo

Country:

Japan

Published Applications:

19

Last publication date:

2018-12-27

Top Assignees for applications by Kozo KATAYAMA

The entities that hold a legal rights for patent applications filed by inventor KATAYAMA Kozo:

Recent patent applications by KATAYAMA Kozo

Kozo KATAYAMA from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-12-27
US20180374542A1
Physics

Semiconductor device

#2 | 2018-02-15
US20180047452A1
Physics

Semiconductor device

#3 | 2016-11-17
US20160336074A1
Physics

Semiconductor device

#4 | 2016-05-12
US20160133641A1
Electricity

Semiconductor device and manufacturing method of semiconductor device

#5 | 2016-03-31
US20160093716A1
Electricity

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

#6 | 2014-07-17
US20140198577A1
Physics

Semiconductor device

#7 | 2013-09-12
US20130235668A1
Physics

Semiconductor device

#8 | 2011-12-22
US20110309428A1
Physics

Semiconductor device

#9 | 2010-06-24
US20100157689A1
Physics

Semiconductor device

#10 | 2010-03-25
US20100074029A1
Physics

Nonvolatile semiconductor memory device and operation method thereof

#11 | 2009-10-15
US20090256193A1
Electricity

Semiconductor device and a method of manufacturing the same

#12 | 2009-08-27
US20090213649A1
Physics

Semiconductor processing device and IC card

#13 | 2009-01-08
US20090010072A1
Physics

Semiconductor device

#14 | 2007-11-15
US20070262382A1
Electricity

Semiconductor device and a method of manufacturing the same

#15 | 2007-06-05
US10857888
-

Semiconductor integrated circuit device, IC card, and mobile terminal

#16 | 2006-10-05
US20060220100A1
Physics

Semiconductor device

#17 | 2006-03-09
US20060050558A1
Physics

Semiconductor device and an integrated circuit card

#18 | 2006-03-02
US20060044873A1
Electricity

Semiconductor device and a method of manufacturing the same

#19 | 2005-11-24
US20050258474A1
Physics

Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed

InventorID:

431771 ⎘