Hui Ouyang

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2007-08-09

Top Assignees for applications by Hui Ouyang

The entities that hold a legal rights for patent applications filed by inventor Ouyang Hui:

Hui Ouyang from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

Via structures and trench structures and dual damascene structures

Partial-via-first dual-damascene process with tri-layer resist approach

Method for reworking low-k dual damascene photo resist

Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof

InventorID:

4328623 ⎘