Albert Birner

Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them

Integrated circuit formed on a semiconductor substrate

Method for fabricating an integrated circuit with a CMOS manufacturing process

Method for fabricating a vertical transistor in a trench, and vertical transistor

Trench storage capacitor

Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material

Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices

Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor

Method of forming a silicon dioxide layer

Method for fabricating trench capacitors for large scale integrated semiconductor memories

Method for producing a dielectric and semiconductor structure

Transistor arrangement in monocrystalline substrate having stress exerting insulators

Memory cell and method for fabricating it

Semiconductor trench structure

Semiconductor module having an insulation layer and method for fabricating a semiconductor module having an insulation layer

Contact spring configuration for contacting a semiconductor wafer and method for producing a contact spring configuration

Method for fabricating trench capacitors and semiconductor device with trench capacitors

Configuration and method for making contact with the back surface of a semiconductor substrate

Method for fabricating a trench structure

Method for fabricating a memory cell