Geng Wang

City:

Beacon, New York

Country:

United States

Published Applications:

Last publication date:

2007-03-08

Top Assignees for applications by Geng Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Geng:

Geng Wang from Beacon, US has applied for patents for these inventions. The list has both pending applications and granted patents:

Method of forming a MOSFET with dual work function materials

Vertical MOSFET with dual work function materials

Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling

InventorID:

4368586 ⎘