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Inventor profile of:

Eugene A. Imhoff

City:

Washington, District of Columbia

Country:

United States

Published Applications:

Last publication date:

2020-12-31

Top Assignees for applications by Eugene A. Imhoff

The entities that hold a legal rights for patent applications filed by inventor Imhoff Eugene A.:

The United States of America, as represented by the Secretary of the Navy 5 Washington, DC United States
The Government of the United States of America, as represented by the Secretary of the Navy 4 Washington, DC United States
The Government of the United States of America, as represented by the Secretary of the Navy 4 Arlington, VA United States
The Charles Stark Draper Company 1 Cambridge, MA United States
The Regents of the University of California 1 Oakland, CA United States
The Government of the United States of America, as rpresented by the Secretary of the Navy 1 Washington, DC United States
THE CHARLES STARK DRAPER LABORATORY, INC. 1 Cambridge, MA United States
Northrop Grumman Systems Corporation 1 Falls Church, VA United States

Recent patent applications by Imhoff Eugene A.

Eugene A. Imhoff from Washington, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-12-31

US20200407213A1

Performing operations; transporting

Silicon carbide structure, device, and method

#2 | 2020-04-16

US20200115219A1

Performing operations; transporting

Silicon carbide microelectromechanical structure, device, and method

#3 | 2018-08-30

US20180244513A1

Performing operations; transporting

SILICON CARBIDE STRUCTURE, DEVICE, AND METHOD

#4 | 2018-03-29

US20180086625A1

Performing operations; transporting

Silicon carbide microelectromechanical structure, device, and method

#5 | 2018-03-08

US20180065844A1

Performing operations; transporting

Material structure and method for deep silicon carbide etching

#6 | 2017-03-30

US20170092724A1

Electricity

Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology

#7 | 2015-10-08

US20150287613A1

Electricity

Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing

#8 | 2015-06-04

US20150155166A1

Electricity

Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology

#9 | 2015-02-26

US20150056763A1

Electricity

Selective deposition of diamond in thermal vias

#10 | 2013-09-19

US20130240905A1

Electricity

Silicon carbide rectifier

#11 | 2010-03-04

US20100055882A1

Electricity

Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

InventorID:

439897 ⎘