Goleta, California
United States
5
2007-06-07
The entities that hold a legal rights for patent applications filed by inventor Haskell Benjamin A.:
Benjamin A. Haskell from Goleta, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Growth of reduced dislocation density non-polar gallium nitride
#2 | 2007-05-17Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
#3 | 2006-06-15Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
#4 | 2006-01-12Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
#5 | 2005-09-29Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
4413815 ⎘