Slingerlands, New York
United States
16
2016-06-30
The entities that hold a legal rights for patent applications filed by inventor HE Ming:
Ming HE from Slingerlands, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
#2 | 2016-04-28Methods of producing integrated circuits with an air gap
#3 | 2015-08-13SELF-FORMING BARRIER INTEGRATED WITH SELF-ALIGNED CAP
#4 | 2015-03-26Methods for fabricating integrated circuits using improved masks
#5 | 2014-12-11Copper based nitride liner passivation layers for conductive copper structures
#6 | 2014-12-04Methods of self-forming barrier integration with pore stuffed ULK material
#7 | 2014-12-04METHODS OF SEMICONDUCTOR CONTAMINANT REMOVAL USING SUPERCRITICAL FLUID
#8 | 2014-12-04Methods for integration of pore stuffing material
#9 | 2014-09-11Electroless fill of trench in semiconductor structure
#10 | 2014-08-07Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device
#11 | 2014-06-17Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device
#12 | 2014-05-29METHODS OF FORMING GRAPHENE LINERS AND/OR CAP LAYERS ON COPPER-BASED CONDUCTIVE STRUCTURES
#13 | 2014-02-27METHODS OF FORMING A METAL CAP LAYER ON COPPER-BASED CONDUCTIVE STRUCTURES ON AN INTEGRATED CIRCUIT DEVICE
#14 | 2013-11-21Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
#15 | 2013-11-19Methods for fabricating integrated circuits with ruthenium-lined copper
#16 | 2013-09-19Methods of forming copper-based conductive structures on an integrated circuit device
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